Introduction
In the radio frequency front ends, the bulky filter bank with different center frequencies can be replaced by a single tunable filter. Over the past years, tunable bandpass filters (BPFs) have drawn a lot of attentions in the modern microwave device due to its potential for miniaturization, complexity and cost reduction. The technologies for tunable BPFs can be summarized as follows: micro-electro mechanical system [Reference Sekar and Entesari1], yttrium iron garnet [Reference Young and Weller2, Reference Zhu, Qiu, Chi, Wang and Tsai3], ferroelectric [Reference Courrèges, Li, Zhao, Choi, Hunt and Papapolymerou4, Reference Koohi, Nam and Mortazawi5], liquid metal [Reference Psychogiou and Sadasivan6, Reference Prasetiadi, Jost and Schulz7] and varactor diode [Reference Suo, Guo and Zhang8–Reference Zhang, Zhao and Wu23]. Among these, varactor-loaded tunable BPF has the advantages of fast tuning speed, compact size, low cost and low weight.
The uniform-impedance microstrip lines loaded with short-(open-) circuited stubs and varactor diodes are utilized in [Reference Suo, Guo and Zhang8] to design tunable BPF. The tunable BPF presented in [Reference Sun, Kaneda and Baeyens9] is constructed by stepped impedance resonators (SIRs) and varactor diodes. In [Reference Suo, Guo and Zhang8, Reference Sun, Kaneda and Baeyens9], the center frequencies can be adjusted by changing the values of varactor diodes, but the passband bandwidths cannot be independently controlled. To be compatible with various communication systems, the fully tunable BPFs with tunable center frequencies and passband bandwidths are in demand. The fully tunable BPFs are proposed in [Reference Guo, You and Luo10–Reference Chen, Wang and Li12] based on different types of resonators (substrate integrated waveguide, short-circuited coupled lines) and tunable coupling structures, and the passband bandwidths can be controlled by adjusting the coupling coefficients between adjacent resonators. In [Reference Zhu, Xue and Sun13], a tunable BPF with constant passband bandwidth is designed by introducing the frequency-dependent coupling between source and load.
The wider frequency tuning range can make the tunable BPFs cover more communication standards. Thus, a lot of efforts [Reference Chen and Chu14–Reference Chen20] have been done to improve the frequency tuning range. For example, multiple mode resonators (MMRs) loaded with varactor diodes are introduced in [Reference Chen and Chu14–Reference Ohira, Hashimoto and Ma18] to expand the frequency tuning range, which is limited by the tuning range of the varactor diode. To further extend the frequency tuning range, three tunable BPFs are stacked vertically in [Reference Xu and Zhu19] and three pairs of switching diodes are placed in the input and output feeding structures [Reference Chen20], which result in high profile and large circuit size. To avoid the above problems, a compact tunable BPF is presented in [Reference Qin, Cai and Li21] based on SIRs, and the frequency tuning range can extend to 51.3% by selecting appropriate values of electrical length and characteristic impedance.
In the practical engineering application, high-order tunable BPFs are in demand for realizing high filtering responses and deep out-band-of rejection performances, and it is difficult to construct Nth-order (N ≥ 3) tunable BPFs based on the above MMRs [Reference Chen and Chu14–Reference Ohira, Hashimoto and Ma18]. Aiming at this problem, the novel coupling structure constructed by capacitors and transmission lines is adopted in [Reference Jung and Min22, Reference Zhang, Zhao and Wu23] to design the fourth- and fifth-order tunable BPFs. However, the detailed design procedure for the Nth-order tunable BPFs is not given in [Reference Jung and Min22], while the passband bandwidth and out-of-band rejection in [Reference Zhang, Zhao and Wu23] need to be further improved. So overall, it is an important and challenging task to present the design procedure for Nth-order fully tunable BPFs with improved passband bandwidths and out-of-band rejections.
In this paper, a detailed design procedure for the Nth-order fully tunable BPFs is presented based on our previous work [Reference Li and Zhang24]. First, varactor diodes are adopted to realize tunable resonance frequencies and coupling coefficients. Second, the even-(odd-)mode method and lumped-element equivalent circuit are utilized to analyze the operating mechanisms of the designed tunable resonator and coupling structure. Then, the detailed design procedure for N-order tunable BPFs is presented on the basis of the analysis above. Finally, the second- and third-order tunable BPFs are designed based on the given design procedure, which verify the effectiveness of the presented design procedure.
Principle of operation
Design of the tunable resonator
The schematic of a proposed tunable resonator is exhibited in Fig. 1(a), which is composed of two coupled lines ((Z 1e, Z 1o, θ 1), (Z 1e, Z 1o, θ 2)) and one varactor diode (C t). Due to the symmetry of the designed resonator, the (even-)odd-mode method is adopted to analyze the operating mechanisms. Moreover, the equivalent circuits of the designed tunable resonator under (even-)odd-mode excitation can be simplified as Fig. 1(b) and 1(c), respectively.
As observed from Fig. 1(b) and 1(c), the admittance of Port 1 in the even- and odd-mode equivalent circuits (Y ine, Y ino) can be deduced as equation (1) based on transmission line theory, and the transmission zero can be introduced when Y ine = Y ino. Moreover, the even- and odd-mode resonant conditions can be expressed as equation (2). By submitting equation (1) into (2), the even-(odd-)mode resonance frequencies (f e, f d) are derived as equation (3) based on Taylor expansion. It is concluded from equation (3) that f e is influenced by the value of varactor diode (C t), the electrical length (θ, θ = θ 1 + θ 2) and the even-mode characteristic impedance (Z 1e) of the coupled line, while f d is only determined by the electrical length (θ) of a coupled line.
To further explain the operating mechanisms of the resonance frequency, the simulated f e, f d from Advanced Design Software (ADS) and the calculated f e, f d from equation (3) with different values of θ and C t are plotted in Fig. 2. Accordingly, the calculated resonance frequencies are in good agreements with the simulated resonance frequencies, which verify the correctness of equation (3). Moreover, f d is much higher than f e when θ is less than $60^\circ$ @1 GHz (C t = 0.63 pF), and f d is much higher than f e from 0.5 to 20.0 GHz (θ = 30o). Thus, there is no coupling between f e and f d in these cases, and the operating mechanisms of the designed tunable resonator become simple. Specifically, the resonance frequency (f 0) is only determined by f e in these cases, and the expression of f 0 can be deduced as equation (4). Moreover, it is seen from Fig. 2(b) that f e decreases with the increased value of C t, while f d remains constant with the increased value of C t. Thus, f 0 can be adjusted by tuning the value of C t.
The frequency tuning range (R f) is defined as equation (5), while the f L and f H mean the lowest and highest resonance frequencies of the designed resonator. It is concluded from equations (4)–(5) that R f relies on Z 1e, θ and C t. Then, Fig. 3 plots the calculated f L, f H, R f with different values of θ and Z 1e when the C t is employed as SMV1405-079 with the tuning range from 0.63 to 2.67 pF (DC bias voltage is from 30 to 0 V). As observed from Fig. 3, larger Z 1e and shorter θ will result in bigger R f, which provides effective guidance to extend R f. In this paper, considering the processing technology, the values of θ and Z 1e are selected as $30^\circ$ @1 GHz and 140 Ω to obtain a wide frequency tuning range.
Operating mechanism of the external quality factor
To analyze the external quality factor (Q e) of the feeding resonator, the lumped-element equivalent circuit should be utilized. Based on [Reference Hong and Lancaster25], the transmission lines ((Z 1e, θ 1), (Z 1e, θ 2)) in the even-mode equivalent circuit (Fig. 4(a)) could be considered as inductances (L 1, L 2), and the expressions of L 1, L 2 are derived as equation (6). Thus, the lumped-element equivalent circuit of the even-mode resonator can be extracted as Fig. 4(b), which also can be simplified as a traditional L′ − C′ circuit (Fig. 4(c)). Accordingly, the input admittances (Y ine(b), Y ine(c)) in Figs 4(b) and 4(c) also can be expressed as equation 7(a)–7(b). To make sure the equivalence of Fig. 4(b) and 4(c), the relationship between Y ine(b) and Y ine(c) should satisfy equation 7(c). Following the circuit theory, the external quality factor $( Q_e^{\rm {\prime}} )$ of the traditional L′ − C′ circuit can be derived as equation (8). Thus, the external quality factor (Q e) in Fig. 4(b) can be derived and shown in equation (9) by submitting equation (7) into (8).
The f 0, Q e calculated from equations (4), (9) and simulated from Advanced Design Software (ADS) are plotted in Fig. 5. Accordingly, the Q e will increase with increased C t, and f 0 will shift to lower frequency with bigger C t. It can be observed from Fig. 5(b) that bigger $\theta _2/\theta _1( \theta _1 + \theta _2 = 30^\circ )$ will result in smaller Q e, and f 0 remains constant with different values of θ 2/θ 1. Consequently, the f 0 can be adjusted by tuning the value of varactor diode (C t), and initial Q e is mainly determined by θ 2/θ 1.
Operating mechanism of the coupling structure
The schematic of the presented coupling structure is exhibited in Fig. 6(a), which is composed of transmission lines (Z m, θ m) and varactor diodes (Cm). Moreover, the transmission line (Z m, θ m) can be considered as the inductance (L m), and the value of L m can be derived as equation (10). Thus, the lumped-element equivalent circuit can be extracted and exhibited in Fig. 6(b), which may produce the spurious band. To verify the analysis above, the transmission coefficients of the designed second-order tunable BPF with different values of C m are plotted in Fig. 7. Accordingly, the bigger C m will result in a lower spurious band during the out-of-band.
As observed from Fig. 6(b), the coupling coefficients are determined by the Cm and L m, while L m is influenced by the characteristic impedance (Z m) and electrical length (θ m) of the transmission line (Z m, θ m). Then, the coupling coefficients with different values of C m, Z m and θ m are illustrated in Fig. 8. As observed from Fig. 8(a), the increased Z m and θ m will result in smaller M ij. It can be concluded from Fig. 8(b) that M ij will become bigger when the value of capacitance (C m) increases. Thus, the initial value of M ij is determined by Z m, θ m, and the value of M ij can be further adjusted by tuning the value of C m.
Design of the fully tunable BPFs
By employing the designed tunable resonators and coupling structures, the schematic diagram of the Nth-order fully tunable BPF is presented and exhibited in Fig. 9. To realize Nth-order Chebyshev filtering response, the values of coupling coefficient (M ij) and external quality factor (Q e) should satisfy equation (11), and the detailed values of g i−1, g i, g i+1 are given in [Reference Hong and Lancaster25].
Based on the analysis above, the detailed design procedure for Nth-order fully tunable BPF is summarized as following:
(1) Given the required center frequency (f 0), passband bandwidth (BW), frequency tuning range (Rf), frequency selectively and harmonic suppression of the Nth-order tunable BPF.
(2) Confirm the order of tunable BPF, and calculate the values of Qe, Mij from equation (11).
(3) Realize the resonance at f 0 by determining the relationship between Z 1e, θ and Ct, based on equation (4).
(4) Optimize the Qe of a designed resonator by adjusting the electrical length ratio of coupled lines (θ 2/θ 1).
(5) Obtain the required Rf by selecting appropriate Ct, Z 1e, θ based on Fig. 3.
(6) Realize the initial Mij by tuning the values of Zm and θm, then adjust the M ij by tuning the value of C m.
(7) Construct the initial layout of Nth-order fully tunable BPF by employing the designed tunable resonators and coupling structures, then simulate and optimize the tunable BPF based on the operating mechanisms.
To demonstrate the generality of the presented Nth-order tunable BPF structure, the second- and third-order tunable BPFs have been designed and simulated. Moreover, the detailed layout and corresponding transmission coefficients with different values of C t and C m are plotted in Figs 10 and 11. Accordingly, the center frequency in the designed Nth-order tunable BPF can be adjusted by tuning the value of C t, and the passband bandwidth in the designed Nth-order tunable BPF could be adjusted by changing the value of C m, which have good agreements with the analysis above.
Experimental verification
To validate the proposed idea, the second-order tunable BPF is fabricated on the TYL substrate with a dielectric of 2.55 and a thickness of 31 mil. Moreover, the photograph of the fabricated second-order tunable BPF is given in Fig. 12(a), and the circuit size occupies 0.03λg × 0.13λg.
Agilent N5230C Network Analyzer is utilized to measure the frequency responses of the designed second-order tunable BPF, while the simulated and measured results are illustrated in Fig. 12. As observed from Fig. 12(a), the measured center frequencies are located at 0.91, 1.05, 1.135, 1.225, 1.33, 1.46 GHz when the values of Ct are selected as 2.67, 1.84, 1.44, 1.17, 0.95 and 0.63 pF, respectively. The measured out-of-band rejection performances with a level better than 20 dB can extend to 2.53, 2.19, 2.07, 1.94, 2.26 and 2.05f 0, respectively. To show the insertion losses clearly, the simulated and measured transmission coefficients ranging from 0.8 to 1.6 GHz are plotted in Fig. 12(b), Accordingly, at 0.91, 1.05, 1.135, 1.225, 1.33 and 1.46 GHz, the simulated insertion losses are 1.35, 0.82, 0.61, 0.54, 0.62 and 0.55 dB, while the measured insertion losses are 3.3, 2.5, 2.1, 1.7, 2,4 and 1.2 dB. Moreover, the differences between the simulated and measured insertion losses are introduced by the fabricated and measured errors. From Fig. 12(b), the measured 3-dB fractional passband bandwidth (FBW) varies from 11.3 to 14.8%.
To illustrate the adjustment of passband bandwidth, the simulated and measured results of the second-order tunable BPF with different Cm are plotted in Fig. 13 when Ct is fixed as 1.17 pF. Accordingly, the passband bandwidth can be controlled by tuning the value of Cm. Specifically, the measured 3-dB FBW is 15.2% when Cm is selected as 0.63 pF, and the measured 3-dB FBW is 8.8% when Cm is chosen as 1.17 pF.
The comparisons between the presented tunable BPFs and other similar works are summarized in Table 1. With regard to the comparisons, a detailed design procedure for the Nth-order fully tunable BPF is proposed. Based on the given design procedure, the second- and third-order BPFs with extended passband bandwidth, wide frequency tuning range and compact size are proposed.
FBW means fractional bandwidth, BC means the bandwidth control, GDM means the general design method, * means simulated results.
Conclusions
In this paper, the detailed design procedure for the Nth-order fully tunable BPFs is presented by employing the novel tunable resonator and coupling structure. The theoretical analysis and experiment results are described to validate the proposed idea. Meanwhile, with a fixed varactor diode, a wider frequency tuning range can be obtained by selecting the appropriate electrical length and characteristic impedance. Based on the presented design method, the second- and third-order tunable BPFs with extended passband bandwidth, wide frequency tuning range, low insertion loss and compact size are designed, which is attractive for modern applications in multiservice and multiband communication systems.
Acknowledgements
This work was supported by Fundamental Research Funds for the Central Universities (No. 06116163) and Postdoctor Research Foundation of Shunde Graduate School of University of Science and Technology Beijing (2021BH004).
Gaoya Dong received the B.S. degree in applied physic from Xidian University, Xi ’an, China, in 2015, and received Ph.D. degree of electrical engineering in Beijing University of Posts and Telecommunications (BUPT), Beijing, China, in 2020.
She is currently a lecturer with the School of Computer and Communication Engineering, Institute of Advanced Networking Technologies and Services, University of Science and Technology Beijing, Beijing, China. She is focused on microwave components, including tunable filter, filtering power divider, filtering antenna.
Shaosheng Li received the B.S. and M.S. degrees in radio engineering from the Beijing University of Posts and Telecommunications (BUPT), and the Ph.D. degree in signal and information processing from BUPT, in 2011. His research interests include SDR communications, cognitive radio, ad hoc networks and microwave components.
Xiaolong Yang (Member, IEEE) received the B.Eng., M.S., and Ph.D. degrees in communication and information systems from the University of Electronic Science and Technology of China, Chengdu, China, in 1993, 1996, and 2004, respectively. He is currently a professor with the School of Computer and Communication Engineering, Institute of Advanced Networking Technologies and Services, University of Science and Technology Beijing, Beijing, China. He has fulfilled more than 30 research projects, including the National Natural Science Foundation of China, the National Hi-Tech Research and Development Program (863 Program), and the National Key Basic Research Program (973 Program). His current research interests include optical switching and Internetworking, the next-generation Internet and microwave components. He has authored more than 80 articles and holds16 patents in these areas.