Introduction
Acquiring safe wireless services with a high data rate and dependable performance against interference is essential for short-range wireless communication in the digital age. A suitable environment for such wireless transmission and reception is provided by ultrawideband (UWB) technology. The use of UWB (3.10–10.6 GHz) for commercial purposes was approved by the US Federal Communications Commission (FCC) in February 2002. This is the inspiration behind UWB technology development, both long and short-range [1]. The bandpass filter (BPF) controls FCC mask emission, a crucial component of the random forest (RF) front end.
Three distinct design approaches have been documented in the literature: the cascade technique, multimode resonator (MMR), multilayer stepped resonator impedance (SIRs), and resonators loaded with stubs [Reference Zhu, Sun and Menzel2–Reference Wu, Chen and Chen5]. A UWB passband filter with five transmission poles is designed by creating an MMR and adding parallel coupled quarter-wavelength lines at the output and input ports. The group delay of the designed structure varies between 0.20 and 0.43 ns [Reference Zhu, Sun and Menzel2]. In reference [Reference Gao, Yang, Wang, Xiao and Wang3], two strong coupled feedlines and a redesigned SIR make up the new structure as a UWB filter. Within the UWB passband, the revised SIR produces multiple resonance peaks. With the improved SIR, the feed line achieves a robust coupling that results in a large bandwidth. Constructed on integrated SIR structures on a multilayer liquid-based polymer crystal substrate, a novel UWB filter has been studied [Reference Hao and Hong4]. Large capacitors in series are applied with broad-side linked square patches on behalf of robust couplings and stepped impedance resonators are used in the design as quasi-lumped inductors and capacitors to reduce harmonic response. This form of eight-pole UWB BPF was created using an equivalent lumped element circuit. In reference [Reference Wu, Chen and Chen5], a triangle MMR loaded with stub-centered UWB BPF using a sharply sloped transition band MultiMode Stub-Loaded Resonator (MM-SLR) has been designed. The filter comprises an asymmetric close-fitting coupled input and output line and a triangle ring MMR with a loaded stub resonator for managing transmission zeros (TZs).
The UWB passband generates five resonant modes, comprising even and odd modes. The triangle-ring MM-two SLR’s TZs can significantly increase the passband edge selectivity. A wideband BPF with the help of a stub of semicircular shape, line of meanders, and capacitor of interdigital and closed ring resonator of rectangular shape has been presented [Reference Choudhary and Chaudhary6]. In reference [Reference Jhariya and Mohan7], a stepped impedance slot-line resonator-based UWB through reconfigurable notch bands has been planned. It comprises open-circuited microstrip feedlines and an unshaped defective ground structure (DGS). The Wireless Local Area Network (WLAN) band notch characteristic can be changed by changing the capacitance between the DGS structure’s slots. An interdigital capacitor, two L-shaped stubs with vias, and a symmetrical Π-type structure generated a miniaturized BPF with notch characteristics [Reference Choudhary and Chaudhary8]. For microwave wireless applications, a compact dual-band bandpass open-ended filter structure with stepped series capacitance and shunt meandering inductance line was built [Reference Mishra, Choudhary and Chaudhary9]. Here, uniplanar structure and manufacturing simplicity are achieved by using coplanar waveguide feeding technology. It utilizes composite right/left-handed transmission line’s (CRLH-TL) zeroth order resonance, a unique phenomenon used to decrease the dimensions of the filter structure.
In reference [Reference Choudhary, Mishra, Kumar and Chaudhary10], a compact BPF with a reshaped resonator and source/load coupling has been utilized for TZ enhancement. This filter structure has been constructed using the CRLH-TL idea. The demonstrated filter construction, with a series gap and a shunted through, provides left-handed capacitance and left-handed inductance. Making a UWB filter with notch characteristics is recommended using terminated cross-shaped resonators [Reference Feng, Shang and Che11]. The reconfigurable band can be changed by adjusting the terminating loaded capacitance. Three parallel linked lines are used to realize the UWB passband, and terminating cross-shaped resonators are used to realize the notch bands. In reference [Reference Mutalib, Zakaria, Shairi and Sam12], a combined extraordinary selectivity wideband microstrip filter along variable notch has been presented. A seventh-order stub with a short-circuited structure is used to design the BPF. The compact UWB BPF has been designed along with a narrow-notched band [Reference Hua and Lu13]. It uses a coplanar waveguide coupling arrangement, and to create a narrow-notched band, double-sided coupled microstrip structures are added. Based on this concept, a reconfigurable notched characteristic of the UWB filter can filter out interferences like WLAN and other RF communication signals.
This work presents a UWB BPF structure developed along a notch band using a small rectangular impedance resonator. It consists of a coupled rectangular resonator (CRR), open stub, and composited split ring resonator (CSRR). In-band and out-of-band properties are improved by the CRR and open stub. The notch band is obtained by placing CSRR below the rectangular resonator (RR). The designed structure consists of 0.15 × 0.10 λg. The equivalent lumped circuit of the suggested structure is included in this manuscript to describe the functioning of the projected filter, whose results are in agreement with EM simulated results. The benefit of the constructed UWB filter is that it offers a small size and a low insertion loss at the operating frequency band.
Design geometry and analysis
The planned UWB BPF with notch characteristics and structural design progression are elaborated on in this section. Figure 1 describes the schematic layout of the designed structure with optimum dimensions. It is built on a substrate called RT/Duroid 5880 with a dielectric constant of 2.2, a tanδ value of 0.0009, and a thickness of 0.787 mm. A CSRR is engraved on the substrate’s underside. Two parallel open stub microstrip lines with dimensions of 4.5 × 0.25 mm are coupled to the CRR on the upper part of the substrate. These microstrip lines are open-circuited and joined with 50-Ω source and load lines. EM simulations are carried out with Ansys High-Frequency Structure Simulator (HFSS) to examine the performance of the suggested design. The fabricated prototype of the designed UWB filter with a notch has been illustrated in Fig. 2
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig1.png?pub-status=live)
Figure 1. Schematic of the designed UWB BPF along notch characteristics. (All structural metrics are displayed in mm: l 1 = 4.5, l 2 = 7.4, w 1 = 0.25, w 2 = 3.5, d = 2.0, s = 0.3, and g = 0.2).
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig2.png?pub-status=live)
Figure 2. Fabricated prototype of the proposed filter (a) top view, (b) bottom view.
.
The corresponding lumped model of the circuit of the developed UWB BPF with a notch is depicted in Fig. 3 to allow for an examination of its characteristics. Lumped inductance L 1 was generated because of the RR and coupling capacitance C 1, mainly due to the gap (g) between the two RRs. Because of the open stub, the capacitance C 3 and inductance L 2 appear. The substrate generates the capacitance C 2 between the top and bottom copper structure. The CSRR at the bottom of the structure generates the shunt lumped component inductance Ls and Ls 1, along with capacitance C S. The circuit model has been designed on the Advanced Design System (ADS) circuit simulator, shown in Fig. 4. It consists of input and output feed as Term G1 and Term G2, and the frequency span for simulation is 0.01–13 GHz with step size of 0.01 GHz. The value of lumped elements used in equivalent circuits is represented by the variables (VAR). The following are the extracted lumped values of the intended UWB filter equivalent circuit using the ADS circuit simulator: L 1 = 0.727 nH, L 2 = 3.1 nH, Ls = 1.51 nH, Ls 1 = 4.74 nH, C 1 = 10.0 pF, C 2 = 5.0 pF, and C 3 = 0.07 pF. The scattering parameters of the designed circuit model on the ADS circuit simulator are illustrated in Fig. 5, which is in close agreement with EM simulated results.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig3.png?pub-status=live)
Figure 3. Constructed circuit model of the designed filter.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig4.png?pub-status=live)
Figure 4. Constructed circuit model of designed filter on ADS circuit simulator.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig5.png?pub-status=live)
Figure 5. ADS circuit simulated scattering parameters of proposed UWB BPF with a notch.
The synthesis of the loaded elements has been computed using the formulas for dispersed elements as reference [Reference Bahl14], based on lumped element values of the equivalent circuit model based on the used substrate and its characteristics.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_eqn1.png?pub-status=live)
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_eqn2.png?pub-status=live)
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_eqn3.png?pub-status=live)
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_eqn4.png?pub-status=live)
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_eqn5.png?pub-status=live)
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_eqn6.png?pub-status=live)
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_eqn7.png?pub-status=live)
where εr is the dielectric constant of the substrate,
h sub is substrate thickness.
t is the thickness of printed copper,
A metal is the metallic area of the filter structure, and
g 0 is the gap between rectangular resonators
Z oc is the characteristic impedance of the open-circuited strip,
l 1 is the length of the open stub.
β oc is the propagation constant, and
l 2 represents the length of the rectangular resonator,
f denotes the center frequency of the UWB response.
s represents the gap of CSRR,
d is the gap between the ring and
p is the perimeter of the rectangular ring.
The structural layout of the proposed filter provides UWB response with a notch band, having TZ at the lower and upper sides of the passband. These TZ can be controlled independently by varying the structural parameters of the designed structure, as shown in Fig. 6. From Fig. 6(a), it can be predicted that the lower TZ can be controlled without varying the upper TZ. While the CSRR’s gap increases, the TZ frequency shifts toward a lower value without affecting the upper TZ. Similarly, in Fig. 6(b), the upper TZ can be controlled without affecting the lower TZ. While increasing the width “w 1” of the open stub, the Upper TZ shifted toward a lower value without any change in other properties. The simulated and measured scattering parameters of the designed filter are illustrated in Fig. 7. The simulated and measured values indicate some change, but overall, there is good agreement between the findings. Connector losses, soldering process flaws, variations in the substrate thickness, or dielectric constant could cause the discrepancy between the measured and simulated findings. The filter’s passband ranges from 3.0–10.7 GHz, and its band rejection ranges from 6.25–6.75 GHz. The input reflection coefficient (IRC) [Reference Bird15] in the filter’s passband is more than 15.0 dB, and the insertion loss is only about 0.1 dB
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig6.png?pub-status=live)
Figure 6. Variation of transmission zeros with respect to: (a) Gap “s” of CSRR, (b) Width “w1” of the open stub.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig7.png?pub-status=live)
Figure 7. Scattering parameters of designed UWB BPF along notch characteristics.
.
The variation of center frequency and bandwidth with respect to the length of the CSRR is illustrated in Fig. 8. Here, the 3 dB bandwidth has been calculated by taking the difference of higher 3 dB cutoff frequency (f 2) and lower 3 dB cutoff frequency (f 1) of the proposed UWB filter. At an optimized value of length of CSRR “lg” (6.5 mm), the higher and lower 3 dB cutoff frequencies are 10.7 and 3.0 GHz, respectively. So, the bandwidth is 7.7 GHz by taking the difference of both the cutoff frequency. The center frequency has calculated by taking the average of both cutoff frequency, its value is 6.85 GHz. While increasing the length of CSRR “lg,” the 3 dB bandwidth increases and its centre frequency gradually decreases.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig8.png?pub-status=live)
Figure 8. Variation of bandwidth and centre frequency with respect to length “lg” of CSRR.
Optimization of the UWB filter through machine learning
The machine learning (ML) flow chart of the proposed UWB filters is displayed in Fig. 9 [Reference Bird15–Reference Cao18]. The HFSS software designs the proposed UWB filter. An enormous amount of data is needed to use the ML algorithms in the proposed filter. The preparation of the dataset involves changing the UWB filter’s multiple parameters. A total of 322,677 datasets were generated, as given in Table 1.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig9.png?pub-status=live)
Figure 9. Block diagram of machine learning in the proposed UWB filter.
Table 1. Dataset
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_tab1.png?pub-status=live)
The six variables d, g, W 1, Wg 1, Ws 1, and frequency generate the dataset. The S parameters depend on the remaining parameters. The training and testing datasets are created from the entire dataset. The ML algorithms are trained on 80% of the dataset, with the remaining 20% being utilized for testing the models that have been trained. Five ML methods are employed in this work: artificial neural network (ANN), K-nearest neighbour (KNN), decision tree (DT), RF, and extreme gradient boosting (XGB) [Reference Goudos, Diamantoulakis, Matin, Sarigiannidis, Wan and Karagiannidis19–Reference Rai, Ranjan and Chowdhury26, Reference Sharma, Zhang and Xin29]. The mean square error (MSE), mean absolute error (MAE), and R 2 score for each ML method are given in Table 2. Their R 2 score shows the accuracy of our ML algorithms. The accuracy, testing time, and training time of several ML methods are shown in Figs. 10–12, respectively. Compared to other ML algorithms, RF ML methods had the best accuracy, as shown in Table 2 and Fig. 13. The S parameters of the proposed UWB filter are accurately predicted by the RF ML algorithm, as shown in Fig. 14. Equations (2) and (3) provide the mathematical expression for the
${R^2}$score and MSE, respectively.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig10.png?pub-status=live)
Figure 10. Actual and predicted values of S-parameters in various ML algorithms.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig11.png?pub-status=live)
Figure 11. Testing time of ML algorithms.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig12.png?pub-status=live)
Figure 12. Training time of ML algorithms.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig13.png?pub-status=live)
Figure 13. Accuracy of ML algorithms.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig14.png?pub-status=live)
Figure 14. Comparison of HFSS and RF ML algorithm.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_eqn8.png?pub-status=live)
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_eqn9.png?pub-status=live)
Where Yi has observed values,
n is the number of data points, and
Yj is predicted values.
Table 2. MAE, MSE, and R 2 score of various ML algorithms
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_tab2.png?pub-status=live)
Table 3 compares the proposed UWB BPF with other comparable studies described in the literature. It includes electrical size, passband bandwidth, notch frequency band, IRC, insertion loss, number of TZs, used substrate, and techniques. The comparison table reveals that the suggested filter performs better than the previously published studies. The size is represented in λg, representing guided wavelength at a lower cutoff frequency. The presented UWB BPF has an electrical size of 0.15 × 0.10 λg.
Table 3. Comparison of designed structure with similar work reported in the literature
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_tab3.png?pub-status=live)
Note: IRC = input reflection coefficient, TZ = transmission zeros.
Conclusion
This study presents a trivial UWB BPF along band notch properties consists a CRR, open stub, and CSRR at the bottom of the structure. The CRR and open stub ensure better in-band and out-off-band characteristics. The notch band is obtained by placing CSRR below the RR. The suggested structure is planned on 5880 Roger substrate with a thickness of 0.787 mm and a dielectric constant of 2.2. The EM simulation findings closely match the circuit-simulated ones, supporting the current design strategy. It provides compactness and improved insertion loss compared to the presented literature. The RF ML method accurately predicts the S parameters of the UWB filter.
Author contributions
Conceptualization, methodology, software, investigation-JK and DC; resources, data curation JK and DC; writing—original draft preparation -JK and DC; writing—review and editing -PR and RC; visualization and Supervision-PR and RC. All authors have read and agreed to the published version of the manuscript.
Competing interests
The authors report no conflict of interest.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig15.png?pub-status=live)
Jayant Kumar Rai was born in Kanker (Chhattisgarh), India, in 1990. He is working as a Lecturer (ET&T) at RKR Government Polytechnic, Janjgir Champa, Chhattisgarh. He received his B.E. degree in Electronics & Telecommunication Engineering in 2011 and M. Tech. in E&TC (Communication) in 2016 from Chhattisgarh Swami Vivekanand Technical University (CSVTU), BHILAI, (C.G.). He has more than 8 years of teaching/research experience. He is currently doing Ph.D. under the QIP Scheme from ABV-Indian Institute of Information Technology and Management, Gwalior, Madhya Pradesh. He has authored or coauthored more than 30 research papers in international/ national journals/conference proceedings. His research interests include dielectric resonator antenna, MIMO, machine learning, and reconfigurable antenna.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig16.png?pub-status=live)
Dilip Kumar Choudhary received the Ph.D. in Electronics Engineering from Indian Institute of Technology (ISM) Dhanbad, India in 2020. Currently, he is working as Assistant Professor in the School of Electronics Engineering, Vellore Institute of Technology, Vellore, India. He has authored more than 40 referred Journal and Conference papers including 17 SCI Journals. He has published one patent and granted three design registrations. He has authored one copyright and three book chapter. He was the recipient of the International Travel Grant from DST, India in 2017. He was the recipient of the Best Paper at PIERS, Singapore in 2017. He served as a session chair at the 2017 IEEE APMC, Kuala Lumpur, Malaysia. He is a potential reviewer of many journals and conferences such as IEEE Access, IEEE MWTL, IEEE TCAS-II, IEEE TEMC, electronics letters, MOTL, RFCAD, radio engineering, PIER, wireless personal communications, and IEEE SPACE conferences, MAPCON conferences, EuCAP conferences. He is a senior member of IEEE, MTT, APS, and AESS society. His current research interests include microwave filtering circuits (filtering antenna, filtering power divider), metamaterial, and their applications, microwave filters, antenna, MIMO antenna, absorber, power dividers, and coupler for wireless communication.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig17.png?pub-status=live)
Pinku Ranjan ABV IIITM Gwalior, Madhya Pradesh, India. Presently, he is working as an Assistant Professor in the Dept. of Electrical and Electronics Engineering, ABV-IIITM Gwalior, M.P, India. He received his Ph.D. with integrated M. Tech from the Department of Electronics Engineering, IIT (ISM) Dhanbad, Jharkhand, India in October 2017. He received his B. Tech in Electronics and Communication Engineering from Jawaharlal Nehru Technological University (JNTU) Hyderabad, India, in 2010. He served as JRF/SRF in the Department of Electronics Engineering, IIT Dhanbad, India, from August 2012 to July 2017. He served as a Research Assistant Professor in the ECE Department at SRM IST Chennai from June 2017 to March 2019. He has authored or coauthored more than 100 research papers in international/ national journal/conference proceedings. He is a reviewer of many international/ national journal/conference proceedings. His research interests include dielectric resonator antenna, MIMO 5G antenna, monopole antenna, multiband hybrid antennas, circularly polarized antennas, wearable antenna, bio-electromagnetics, machine learning, deep learning, IOT devices and image processing, RIS, metamaterial bio-sensor, reconfigurable antenna, terahertz 6G antennas. He is an IEEE senior member. Under his guidance more than 50 B. Tech and 30 M. Tech completed thesis work, 5 Ph.D. working. He received 4 sponsored projects.
![](https://static.cambridge.org/binary/version/id/urn:cambridge.org:id:binary:20250125102425268-0693:S1759078725000029:S1759078725000029_fig18.png?pub-status=live)
Rakesh Chowdhury is currently working as an Assistant Professor in ABV-Indian Institute of Information Technology and Management, Gwalior (ABV-IIITM), India. He did his M. Tech and Ph.D. from IIT Dhanbad in 2015 and 2021, respectively. He has researched in developing mostly dielectric resonator antenna (DRA). Development of the circularly polarized compact antenna is one of his major areas of contribution. He has published over 50 papers in the leading international journals and conferences along with a reference book on CP-DRA published by Artech House, London, United Kingdom. He is also serving an editorial board member of international journal of antennas and propagation, Wiley. He is a Senior Member of URSI, Member of IEEE, and potential reviewer of many international journals such as the IEEE Transactions on Antennas and propagation, IEEE Access, IEEE Antennas and Wireless Propagation Letters, AEU etc.