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The Wet Etching of CdZnTe Substrates for OMVPE Growth

Published online by Cambridge University Press:  25 February 2011

T.W. Chan ,
X.J. Bao ,
I.H. Oh ,
P.J. Sides  and
E.I. Ko
T.W. Chan
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
X.J. Bao
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
I.H. Oh
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
P.J. Sides
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
E.I. Ko
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
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Abstract

The etching of CdZnTe substrates by bromine-methanol solutions was studied by chemi-mechanical polishing. Over a bromine concentration of 0.5 to 3.5 volume percent, the etch rates varied linearly with bromine concentration, were independent of substrate orientation, and, within experimental uncertainties, were identical to those for the etching of CdTe. The etched samples were used as substrates for the organometallic vapor phase epitaxy (OMVPE) growth of CdTe in an impinging jet reactor. The bromine concentration used in etching did not affect the growth rate or the morphology of the deposited CdTe films, but a higher defect density was found for the film grown on a substrate with the orange-peel structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 275
Copyright
Copyright © Materials Research Society 1992

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References

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