Hostname: page-component-6bf8c574d5-7jkgd Total loading time: 0 Render date: 2025-02-19T11:42:24.988Z Has data issue: false hasContentIssue false
  • English
  • Français

Viscoelastic Stress Relief in Patterned Silicon-on-Insulator Structures

Published online by Cambridge University Press:  22 February 2011

Theodore J. Letavic ,
Edward W. Maby  and
Ronald J. Gutmann
Theodore J. Letavic
Affiliation:
Department of Electrical, Computer and Systems Engineering and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180.
Edward W. Maby
Affiliation:
Department of Electrical, Computer and Systems Engineering and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180.
Ronald J. Gutmann
Affiliation:
Department of Electrical, Computer and Systems Engineering and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180.
Get access

Abstract

A high-temperature viscoelastic stress relief technique has been investigated as a means for reducing in-plane stress encountered during zone-melt recrystallization of patterned silicon-on-insulator structures. This technique incorporates a phosphosilicate glass layer between the silicon film and the insulating substrate to provide a viscous flow mechanism for stress relief within the composite structure. The stress relaxation can bequalitatively described by a mechanical model which couples thermal expansion and viscoelastic flow. The model predicts the time constant for stress relief at high temperatures as a function of pattern size, and the results are useful as a design aid for zone-melt recrystallization experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 327
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Maby, E. W., Geis, M. W., Coz, Y. L. Le, Silversmith, D. J., Mountain, R. W. and Antoniadis, D. A., Electron Device Lett. EDL-2, 241 (1981).Google Scholar
2. Tsaur, B-Y, Fan, J. C. C. and Geis, M. W., Appl. Phys. Lett. 40, 323 (1982).Google Scholar
3. Letavic, T. J., Maby, E. W. and Gutmann, R. J., Silicon-on-Insulator and Buried Metals in Semiconductors, edited by Sturm, J. C., Chen, C. K., Pfeiffer, L. and Hremment, P. L. F., Mater. Res. Soc. Symp. Proc. 107, 183 (1988).Google Scholar
4. Lemons, R. A., Bosch, M. A., Dayem, A. H., Grogan, J. K. and Mankiewich, P. M., Appl. Phys. Lett. 40, 469 (1982).CrossRefGoogle Scholar
5. Martinez, A., Pandya, R. and Arnold, E., Silicon-on-Insulator and Bufed Metals in Semiconductors, edited by Sturm, J. C., Chen, C. K., Pfeiffer, L. and Hemment, P. L. F., Mater. Res. Soc. Symp. Proc. 107, 415 (1988).Google Scholar
6. Zeyfang, R., Solid-State Electron. 14, 1035 (1971).Google Scholar
7. Olsen, G. H. and Ettenberg, M., Crystal Growth II, edited by Goodman, C. H. L. (Plenum Press, New York, 1978) p. 49.Google Scholar
8. Blech, I. A. and Meieran, E. S., J. Appl. Phys. 38, 2913 (1967).Google Scholar
9. Jaccodine, R. J. and Schlegel, W. A., J. Appl. Phys. 37, 2429 (1966).Google Scholar
10. Doremus, R. H., Glass Science (Wiley, London, 1973), pp. 101–114.Google Scholar
11. Hammond, C. R., Phys. and Chem. of Glasses 19, 41 (1978).Google Scholar