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Vibrational Spectroscopy Of Gold Hydrogen Complexes In Silicon

Published online by Cambridge University Press:  15 February 2011

M. J. Evans ,
M. G. Gornstein  and
Michael Stavola
M. J. Evans
Affiliation:
Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
M. G. Gornstein
Affiliation:
Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
Michael Stavola
Affiliation:
Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
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Abstract

Several vibrational bands have been observed in the region 1750–1900 cm−1 for n-type silicon into which gold and hydrogen had been introduced by high temperature diffusion. This paper focuses primarily on a defect which gives rise to bands at 1813.3 and 1827.1 cm−1. This center contains a single hydrogen atom and has two charge states in the gap with trigonal symmetry. We propose a tentative model in which this complex contains a substitutional Au atom and a single hydrogen atom at one of two possible antibonding sites, bonded either to Au or to Si. A defect observed previously in Si samples doped with Pt and H which gives rise to hydrogen stretching bands at 1880.7 and 1897.2 cm−1 has similar properties to the Au-H complex discussed here, suggesting that these defects have the same structure. Other hydrogenstretching modes observed in Si samples that contain Au and H are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 275
Copyright
Copyright © Materials Research Society 1997

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References

1. Pearton, S.J., Corbett, J.W., and Stavola, M., Hydrogen in Crystalline Semiconductors (Springer Verlag, Berlin, 1992).Google Scholar
2. Pearton, S.J., Hydrogen in Semiconductors, Chapt. 5, edited by Pankove, J.I. and N.M, Johnson (Academic, San Diego, 1991).Google Scholar
3. Sveinbjörnsson, E.Ö. and Engström, O., Phys. Rev. B 52, 4884 (1995).Google Scholar
4. Jost, W., Weber, J., and Lemke, H., Semicond. Sci. Technol 11, 22 (1996); 525 (1996).Google Scholar
5. Jost, W. and Weber, J., Phys. Rev. B 54, R11038 (1996).Google Scholar
6. Uftring, S.J., Stavola, M., Williams, P.M., and Watkins, G.D., Phys. Rev. B 51, 9612 (1995).Google Scholar
7. Stavola, M., Uftring, S.J., Evans, M.J., Williams, P.M., and Watkins, G.D., Defect and Impurity Engineered Semiconductors and Devices, ed. by Ashok, S., Chevalier, J., Akasaki, I., Johnson, N. M, and Sopori, B.L (MRS, Pittsburgh, 1995), pp. 341–352.Google Scholar
8. Höhne, M., Juda, U., Martynov, Yu. V., Gregorkiewicz, T., Amerlaan, C.A. J., and Vlasenko, L.S., Phys. Rev. B 49, 13 423 (1994).Google Scholar
9. Williams, P.M., Watkins, G.D., Uftring, S., and Stavola, M., Phys. Rev. Lett. 70, 3816 (1993).Google Scholar
10. A preliminary report of two bands at 1813.3 and 1827.1 cm−1 in Si containing Au and H was given in Ref. (7).Google Scholar
11. McQuaid, S.A., Binns, M.J., Newman, R.C., Lightowlers, E.C., and Clegg, J. B., Appl. Phys. Lett. 62, 1612 (1993).Google Scholar
12. Kaplyanskii, A.A., Opt. Spectrosk. 16, 606 (1964).Google Scholar
13. Feichtinger, H., in Electronic Structure and Properties of Semiconductors, edited by W., Schröter (VCH, Weinheim, 1991), p. 143.Google Scholar
14. Denteneer, P. J. H., Walle, C. G. Van de, and Pantelides, S.T., Phys. Rev. Lett. 62, 1884 (1989).Google Scholar
15. Watkins, G.D., in Defects in Semiconductors 15, ed. by Ferenczi, G. (Trans Tech, Aermansdorf 1989) p.39.Google Scholar
16. Uftring, S.J., Evans, M.J., and Stavola, M., unpublished.Google Scholar
17. Pajot, B., Newman, R.C., Murray, R., Jalil, A., Chevalier, J., and Azoulay, R., Phys. Rev. B 37, 4188 (1988).Google Scholar
18. Newman, R.C., SemiconcL Sci. Technol. 5, 911 (1990).Google Scholar
19. Walck, S.N. and Fowler, W.B., Phys. Rev. B 51, 13146 (1995).Google Scholar
20. Vetterhöffer, J. and Weber, J., Phys. Rev. B 53, 12835 (1996).Google Scholar
21. Brotherton, S.D., Bradley, P., and Gill, A., J. Appl. Phys. 57, No. 6, 1783 (1985).Google Scholar