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Ultra-thin strain relaxed SiGe buffer layers with 40% Ge

Published online by Cambridge University Press:  17 March 2011

Klara Lyutovich ,
Erich Kasper  and
Michael Oehme
Klara Lyutovich
Affiliation:
University of Stuttgart, Institute of Semiconductor Engineering, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Erich Kasper
Affiliation:
University of Stuttgart, Institute of Semiconductor Engineering, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Michael Oehme
Affiliation:
University of Stuttgart, Institute of Semiconductor Engineering, Pfaffenwaldring 47, 70569 Stuttgart, Germany
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Abstract

Virtual substrates with ultra-thin SiGe strain relaxed buffers have been grown on Si substrates by a method employing point defect supersaturation in the growing layers. A concept of the point defect influence on the strain relaxation and on defect interactions in layers has been proposed. A method is developed to increase the degree of relaxation in sub-100 nm SiGe buffer layers and to provide a smooth surface morphology. Layer growth has been realized by solid source molecular beam epitaxy in a chamber equipped with an in situ monitoring system. One of the growth stages, performed at a very low temperature, serves the generation of point defects. Strain relaxation tunable up to the high degree and a crosshatch-free surface morphology are demonstrated in 40nm thick SiGe buffers which contain 40-45% Ge.

Growth monitoring enables the control of the process window and the layer crystallization by a chosen mechanism.

Virtual substrates produced by the described method were successfully tested in nMODFET structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B1.4
Copyright
Copyright © Materials Research Society 2004

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References

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