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Transport Properties of Polycrystalline Silicon with Various Textures and Microstructures

Published online by Cambridge University Press:  17 March 2011

Toshio Kamiya ,
Kouichi Nakahata ,
Atsushi Suemasu ,
Kazuyoshi Ro ,
C.M. Fortmann  and
Isamu Shimizu
Toshio Kamiya
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
Kouichi Nakahata
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
Atsushi Suemasu
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
Kazuyoshi Ro
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
C.M. Fortmann
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
Isamu Shimizu
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, JAPAN
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Abstract

Carrier transport property was studied in relation to microstructure for polycrystalline silicon (poly-Si) prepared from SiF4 and H2 gas mixtures at temperatures below 360°C. It was found that Hall mobility markedly increased with the increase in crystal fraction especially at crystal fractions larger than 80% and it exhibited good correlation with orientation fluctuation as well as with crystal fraction. In addition, dependence of Hall mobility on orientation fluctuation exhibited different tendency between (220) and (400) oriented poly-Si. It suggests that atomic configuration and electronic structure at grain boundaries depends on orientation structure, resulting in the different dependence of Hall mobility on orientation fluctuation. By applying hot-vapor annealing at 310°C to 1 μm-thick P-doped (400) oriented poly-Si, Hall mobility was improved from 10 cm2/Vs to 17 cm2/Vs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A27.1
Copyright
Copyright © Materials Research Society 2000

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References

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