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Transmutation Doping of III-Nitrides

Published online by Cambridge University Press:  10 February 2011

Galina Popovici
Galina Popovici*
Affiliation:
Rockbit International Inc, 7601 Will Rogers Blvd, Fort Worth, TX 76140gpopovici@rbi-gearhart.com, rrmnihai@showme.missouri.edu
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Abstract

Transmutation doping of (In, Ga, Al)N compounds by neutron irradiation is a promising and totally unexplored field to date. It is much more effective than that of Si due to large neutron capture cross section and abundance of In, Al and Ga isotopes participating in reaction. This should make the irradiation possible in low-flux reactors and result in smaller radiation damage. Annealing of the radiation damage seems feasible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 519
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1 Popovici, G., Morkoc, H., and Mohammad, S. N., Deposition and Properties ofIIINitrides by Molecular Beam Epitaxy in “Group III nitride semiconductor compounds, Physics and Applications” Edited by Bernard, Gil, (Claredon, Oxford UK), p. 19–69, 1998.Google Scholar
2 Popovici, G. and Morkoc, H., Growth and Doping of and Defects in IlI-Nitrides in” “Ill-V Nitride Semiconductors and Optoelectronic Devices” v.2 “edit by S., Pearton, to be published in 1999.Google Scholar
3 Kim, W., Botchkarev, A. E., Salvador, A., Popovici, G., Tang, H. and Morkoc, H.,. J. Appl. Phys. 82, 219(1997).10.1063/1.365801Google Scholar
4 Pearton, S. J., Vartuli, C. B., Zolper, J. C., Yuan, C. and Stall, R. A., Appl. Phys. Lett, 67,1435 (1995).10.1063/1.114518Google Scholar
5 Rubin, M., Newman, N., Chen, J. C., Fu, T. C., and Ross, J. T., Appl. Phys. Letters, 64, 64(1994).10.1063/1.110870Google Scholar
6 Zolper, C. J. C., Wilson, R. G., Pearton, S. J., and Stall, R. A., Appl. Phys. Lett, 68,1945 (1996).Google Scholar
7 Popovici, G., Melnikov, A. A., Varichenko, V.S., Khasawinah, S., Sung, T., Prelas, M. A., Denisenko, A. B., Penina, N. M., Martinovich, V.A., Drozdova, E. N., A. Zaitsev, M., and Fahmer, W. R., Diamond Relat.Mater. 5, 761 (1996).10.1016/0925-9635(95)00399-1Google Scholar
8 Khasawinah, S.A., Popovici, G., Farmer, J., Sung, T., Prelas, M. A., Chamberlain, J., and White, H., J. Mater. Research, 10, 2523(1995).10.1557/JMR.1995.2523Google Scholar
9 Heat, R.L., Table of the Isotopes, in CRC Handbook of Chemistry and Physics, Ed. R.C., Weast, CRC Press, West Palm Beach, 1978, pp.B–270 to B-354.Google Scholar
10 Walker, F.W., Parrington, J.R., Feiner, F., Nuclides and Isotopes, 14-th Edition, GN Nuclear Energy, General Electric Company, 1989.Google Scholar
11 The data compiled by M. Popovici, Missouri University Research Reactor.Google Scholar
12 Tan, H. H., Williams, J. S., Zou, J. S., Cockayne, d. J. H., Pearton, S. J., Stall, R. A., Appl. Phys. Lett. 69, 2364(1996).Google Scholar