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Transmission Electron Microscopy Studies of Electrical Active GaAs/GaN Interface Obtained by Wafer Bonding

Published online by Cambridge University Press:  01 February 2011

J. Jasinski ,
Z. Liliental-Weber ,
S. Estrada  and
E. Hu
J. Jasinski
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
S. Estrada
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
E. Hu
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
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Abstract

Transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX) studies of GaAs/GaN interfaces, obtained by direct wafer bonding, are presented. TEM observations show that most of the interface area was well bonded. A thin oxide layer, confirmed by EDX, was present at the interface in the well-bonded regions. Plan-view TEM studies showed the presence of two dislocation networks in such regions. They formed to accommodate: (1) tilt between bonded crystals and (2) strain, which appeared during sample cooling due to mismatch in thermal expansion coefficients. Asymmetrical, often elongated, cavities, formed on the GaAs side, were present at the interface between the well-bonded regions. It was shown by EDX that the walls of these cavities are covered with native oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K7.15
Copyright
Copyright © Materials Research Society 2002

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