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Ti/Ni/Au/Diamond MIS Field Effect Transistors With TiO2 Gate Dielectric

Published online by Cambridge University Press:  11 February 2011

Yuhong Cai  and
Aris Christou
Yuhong Cai
Affiliation:
Department of Material Science and Engineering, University of Maryland, College Park, MD 20770, U.S.A.
Aris Christou
Affiliation:
Department of Material Science and Engineering, University of Maryland, College Park, MD 20770, U.S.A.
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Abstract

Ti/Ni/Au/diamond metal-insulator-semiconductor field effect transistors with TiO2 gate dielectric have been successfully fabricated. In this work, multi-layer metallization on the semiconducting diamond surface was investigated. Post-metallization annealing was performed and EDS analysis was conducted both before annealing and after annealing. Elevated temperature annealing accelerates the diffusion between multi-layer metal and lowers the ohmic contact resistance of the interface. Current-voltage characteristics of the transistor are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.8
Copyright
Copyright © Materials Research Society 2003

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References

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