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Three Dimensional Integration with Benzocyclobutene as the Wafer-Bonding Medium

Published online by Cambridge University Press:  01 February 2011

Sang Kevin Kim ,
Lei Xue  and
Sandip Tiwari
Sang Kevin Kim
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, 14853, USA
Lei Xue
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, 14853, USA
Sandip Tiwari
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, 14853, USA
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Abstract

A successful wafer-scale device layering process for fabricating three-dimensional integrated circuits (3D ICs) using Benzocyclobutene (BCB) is described. In the reported embodiment of the method, a sub-micron thick “donor” device layer is transplanted onto a fully fabricated “host” wafer with BCB as the intervening medium. Experimental results, including RIE study and planarization of BCB processed through the 3D fabrication procedure are reported. We conclude with an approach to alleviate BCB and fabrication induced wafer bowing, which leads to poor wafer to wafer alignment in 3D integration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 833: Symposium G – Materials, Integration, and Packaging Issues for High-Frequency Devices II , 2004 , G3.5
Copyright
Copyright © Materials Research Society 2005

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References

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