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Thermal Wave and Lightscattering Measurements on Differently Processed Si-Wafers

Published online by Cambridge University Press:  28 February 2011

P. Gerlach ,
P.O. Hahn ,
A. Schnegg ,
A. Alpern  and
G. Menzel
P. Gerlach
Affiliation:
Wacker-Chemitronic GmbH, Research Center, Postfach 1140, D-8263 Burghausen, FRG
P.O. Hahn
Affiliation:
Wacker-Chemitronic GmbH, Research Center, Postfach 1140, D-8263 Burghausen, FRG
A. Schnegg
Affiliation:
Wacker-Chemitronic GmbH, Research Center, Postfach 1140, D-8263 Burghausen, FRG
A. Alpern
Affiliation:
Siemens AG, Otto-Hahn-Ring 6, D-8000 Munich 83, FRG
G. Menzel
Affiliation:
Siemens AG, Otto-Hahn-Ring 6, D-8000 Munich 83, FRG
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Abstract

Subsurface damage and surface roughness is determined on silicon wafers by using thermal wave and lightscattering measurements. A comparison with the dielectric breakdown behaviour of thin oxides proves the deleterious influence of a rough Si/SiO2 interface on the breakdown voltage. Subsurface damage on the other hand lowers the breakdown voltage only in connection with surface roughness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 267
Copyright
Copyright © Materials Research Society 1989

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References

/l/ Hahn, P.O., Kerstan, M. in “Surface Measurements and Characterization”, SPIE Proceed, Vol. 1009 (Hamburg 88)Google Scholar
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/3/ Mattsson, L., in “Thin Film Technologies”, SPIE Proceedings, No. 652 (Innsbruck, 1986)Google Scholar
/4/ Smith, W. Lee, Hahn, S., Arst, M. in Semiconductor Silicon 86 edited by Huff, H. et al. (ECS Proceed. 1986) p. 206 Google Scholar
/5/ Morita, E., Sakurai, M.; Seki, H., Shimanuki, Y. in Proc. Electrochem. Soc., Atlanta May, (1988) These results were confirmed by recent measurements of the authors (unpublished)Google Scholar
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