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Texturing of InP Surfaces for Device Applications

Published online by Cambridge University Press:  25 February 2011

Sheila G. Bailey ,
Navid S. Fatemi  and
Geoffrey A. Landis
Sheila G. Bailey
Affiliation:
NASA Lewis Research Center 302-1, Cleveland, OH, 44135
Navid S. Fatemi
Affiliation:
Sverdrup Technology, Inc., NASA Lewis Research Center, Brook Park, OH, 44142
Geoffrey A. Landis
Affiliation:
Sverdrup Technology, Inc., NASA Lewis Research Center, Brook Park, OH, 44142
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Abstract

A unique process for texturing InP (100) wafers by anisotropic etching has been developed. The process produces irregular V-grooves on the surface, which reduce the surface reflectivity. The process does not require photolithography or masking. The etching characteristics depend on doping, with etching tending to proceed more rapidly on the more heavily doped samples. Reduced reflectivity surfaces formed using this process can be applied to solar cells, photodetectors, and other optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 341
Copyright
Copyright © Materials Research Society 1992

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References

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