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Temperature Ramping for Nucleation of Oxygen Precipitates in Silicon

Published online by Cambridge University Press:  21 February 2011

R. F. Pinizzotto ,
H. F. Schaake ,
R. G. Massey  and
D. W. Heidt
R. F. Pinizzotto
Affiliation:
Materials Science Laboratory, Texas Instruments Incorporated, P.O.Box 225936, M.S. 147, Dallas, Texas 75265
H. F. Schaake
Affiliation:
Materials Science Laboratory, Texas Instruments Incorporated, P.O.Box 225936, M.S. 147, Dallas, Texas 75265
R. G. Massey
Affiliation:
Materials Science Laboratory, Texas Instruments Incorporated, P.O.Box 225936, M.S. 147, Dallas, Texas 75265
D. W. Heidt
Affiliation:
Materials Science Laboratory, Texas Instruments Incorporated, P.O.Box 225936, M.S. 147, Dallas, Texas 75265
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Abstract

A new method for the nucleation of oxygen precipitates in Czochralski silicon is described. The temperature is ramped at approximately 100°C/hr from a very low value, near 400°C, to the highest temperature used for subsequent process steps. The technique generates a larger precipitate number density and a greater volume fraction of precipitated oxygen than standard isothermal nucleation anneals. The morphology of the precipitates changes from 0.lum sizéd (100) platelets to small particles unresovable by TEM. The new temperature ramping technique can reduce the time needed for precipitate nucleation by at least a factor of three. The details of oxygen precipitation can be totally controlled by adjusting the temperature ramp rate as a function of time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 275
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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