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Temperature Dependent Dielectric Properties of Polycrystalline 96%Al2O3

Published online by Cambridge University Press:  01 February 2011

Liang-Yu Chen  and
Gary W. Hunter
Liang-Yu Chen
Affiliation:
Ohio Aerospace Institute/NASA Glenn Research Center at Lewis Field, Cleveland, OH 44135
Gary W. Hunter
Affiliation:
NASA Glenn Research Center at Lewis Field, Cleveland, OH 44135
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Abstract

Polycrystalline Al2O3 substrates have been proposed and tested for high temperature micro devices packaging intended for operation at temperatures up to 500°C. The dielectric properties of this material, including dielectric constant and effective volume conductivity, at elevated temperatures are of interest, especially for RF packaging applications. This article reports temperature dependent dielectric properties of polycrystalline 96% Al2O3 substrates from room temperature to 550°C measured by the AC impedance method at 120 Hz, 1 kHz, 10 kHz, 100 kHz, and 1 MHz. We observed negative temperature coefficients of volume electrical conductivity of 96% Al2O3 at 1 k, 10 k, and 100 kHz between room temperature and 50°C. The dielectric constant of the material increases significantly with temperature at frequencies below 10 kHz. The physical mechanisms of these dielectric behaviors of 96% Al2O3 at elevated temperatures are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 833: Symposium G – Materials, Integration, and Packaging Issues for High-Frequency Devices II , 2004 , G7.6
Copyright
Copyright © Materials Research Society 2005

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References

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