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Tem Analysis of Interfacial Phases in Alumina-Ferrite Systems

Published online by Cambridge University Press:  26 February 2011

Lynne M. Gignac  and
Subhash H. Risbud
Lynne M. Gignac
Affiliation:
University of Arizona, Department of Materials Science and Engineering, Tucson, AZ 85721
Subhash H. Risbud
Affiliation:
University of Arizona, Department of Materials Science and Engineering, Tucson, AZ 85721
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Abstract

Transmission Electron Microscopy (TEM) was used to analyze the interface between RF sputtered alumina thin films and (NiZn)Fe2O4 substrates. Bright field and dark field TEM images, High Resolution Electron Microscopy (HREM), and Selected Area Electron Diffraction (SAED) patterns provided direct evidence of eta-alumina crystalline regions near the filmsubstrate interface. The orientation and existence of the crystalline alumina phase was dependent on the substrate crystal orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 122: Symposium I – Interfacial Structure, Properties, and Design , 1988 , 39
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Salama, C.A.T.. J. Eleochem. Soc.. 117(7)), 913 (1970).Google Scholar
2. Gardner, R.A.. J. Vac. Sci. & Tech.. 14(5)), 1139 (1977).Google Scholar
3. Frieser, R. G.. J. Electrochem. Soc., 113(4)), 357 (1966).Google Scholar
4. Tanaka, T. and Iwauchi, S.. Jap. J. Appl. Phys.. 7, 1420 (1968).Google Scholar
5. Ferrieu, E. and Pruniax, B., J. Electrochem. Soc.: Sol. State. Sci., 116(7)), 1008 (1969).Google Scholar
6. Gignac, L.M. and Risbud, S.H., Pridans, J.V., and Schubert, S.A., in preparation.Google Scholar
7. Gignac, L.M. and Risbud, S.H., J. Mat. Sci., in press.Google Scholar
8. Bravman, J.C. and Sinclair, R.C., J. Electron Micro. Tech., 1, 53 (1984).Google Scholar