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Surface Contamination Level of GaAs Wafers Treated with Solutions of Organic Base Measured by Total Reflection X-Ray Fluorescence (TXRF)

Published online by Cambridge University Press:  25 February 2011

H. Shibaya ,
H. Kondo  and
K. Tomizawa
H. Shibaya
Affiliation:
Mitsubishi Materials Corporation, Compound Semiconductor Center, 1–297 Kitabukuro-cho. Omlya, Saltama, 330, Japan
H. Kondo
Affiliation:
Mitsubishi Materials Corporation, Central Research Institute, 1–297 Kltabukuro-cho, Omiya, Saitama, 330, Japan
K. Tomizawa
Affiliation:
Mitsubishi Materials Corporation, Compound Semiconductor Center, 1–297 Kitabukuro-cho. Omlya, Saltama, 330, Japan
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Abstract

Contamination level of chemically cleaned (100) GaAs wafer surfaces were measured by Total reflection X-Ray Fluorescence (TXRF). Cu and Zn were detected as major metallic Impurities on GaAs surfaces. The Cu contamination level was in the range of 1011 atoms/cm2 on wafers treated with NH4 OH/H2O2 /H2O (80:1:400) mixture. On the other hand, Cu could be reduced to less than 5×1010 atoms/cm2 and Zn could be controlled below the detection limit by treating with a choline/H2O2 /H20/Na5P3O10 or SEMICO-CLEAN 23/H2O2 /Na5P3O10 solution. Surface cleanliness depended on the H2O2 concentration and whether or not Na5P3O10 was present in the organic base solutions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 329
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Hiramoto, T. and Ikoma, T., Proceedings Semi-insulating III - V Materials, Malmo, edited by Grossman, G. and Ledebo, L. (Adam Hilger, Bristol, 1988), p.337.Google Scholar
2. Zilko, J. L. and Williams, R. S., J. Electrochem. Soc., 129, No.2, 406(1982)Google Scholar
3. Partin, D. L., Milnes, A. G. and Vassamillet, L. F., J. Electrochem. Soc., 126, No.9, 1581(1979)Google Scholar
4. Hockett, R. S., Proceeding - The Electrochemical Society, v 90, n 9, (Electrochem. Soc., Pennington, NJ, USA, 1990), p.227.Google Scholar
5. Hockett, R. S., Metz, J. and Tower, J. P., Proceedings Semi-insulating II - V Materials, Toronto, edited by Milnes, A. G. and Miner, C. J. (Adam Hilger, Bristol, 1990), p.281.Google Scholar
6. Kondo, H., Ryuta, J., Morita, E., Yoshimi, T. and Shimanuki, Y., Jpn. J. Appl. Phys. 31, L11 (1992)Google Scholar