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Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions
Published online by Cambridge University Press: 01 February 2011
Abstract
Silicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.
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- Copyright © Materials Research Society 2006