Hostname: page-component-6bf8c574d5-9nwgx Total loading time: 0 Render date: 2025-02-15T09:40:46.476Z Has data issue: false hasContentIssue false
  • English
  • Français

Sub-Nanometer-Equivalent PZT Thin Films Fabricated by Low-Temperature MOCVD

Published online by Cambridge University Press:  22 February 2011

Hiroshi Miki ,
Yuzuru Ohji  and
Shinichi Tachi
Hiroshi Miki
Affiliation:
ULSI Research Center, Central Research Laboratory, Hitachi Ltd., 1–280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185, Japan.
Yuzuru Ohji
Affiliation:
ULSI Research Center, Central Research Laboratory, Hitachi Ltd., 1–280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185, Japan.
Shinichi Tachi
Affiliation:
ULSI Research Center, Central Research Laboratory, Hitachi Ltd., 1–280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185, Japan.
Get access

Abstract

Ferroelectric PZT (Pb (Zr,Ti)O3) from 100 nm down to 50 nm thick was deposited on Pt/SiO2/Si substrates using MOCVD (Metal Organic Chemical Vapor Deposition) under reduced pressure at 550°C. Using Pb (DPM)2, Zr (DPM)4, and Ti(i–OC3H7)4 as precursors made it possible to control the composition of CVD films and to produce pure perovskite crystalline structure in the range of thickness less than 100 nm. Electrical measurements of the capacitors revealed that 50-nm PZT films typically had a dielectric constant of 500, resulting in the same capacitance as 0.4-nm SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 535
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Parker, L. H. and Tasch, A. F., IEEE Circuits and Devices Magagine (1990).Google Scholar
2. Koyama, K., Sakuma, T., Yamamichi, S., Watanabe, H., Aoki, H., Ohya, S., Miyasaka, Y., and Kikkawa, T., IEDM Tech. Dig., 823 (1991).Google Scholar
3. Itoh, H., Kashihara, K., Okudaira, T., Tsukamoto, K., and Akasaka, Y., IEDM Tech. Dig., 831 (1991).Google Scholar
4. Scott, J. F. and de Araujo, C. A. P., SCIENCE 246, 1400 (1989).Google Scholar
5. Okada, M., Tominaga, K., Araki, T., Katayama, S., and Sakashita, Y., Jpn. J. Appl. Phys. 29, 718 (1990).Google Scholar