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Submicrometer-Linewidth Laser Doping*

Published online by Cambridge University Press:  15 February 2011

J. Y. Tsao  and
D. J. Ehrlich
J. Y. Tsao
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
D. J. Ehrlich
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
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Abstract

Dopant patterns of 250-nm linewidth have been written in silicon by localized heating with a cw laser beam, and then transferred into positive and negative surface-relief patterns by preferential etching. The tightly focused beam both generates free dopant atoms and simultaneously promotes solidstate diffusion into the substrate. Because of the nonlinear dependence of diffusion rates on temperature, the linewidths of the patterns are substantially narrower than those of both the temperature and the laser-beam profiles on tile surface. In addition, an enhancement is observed in diffusion rates under the strong thermal gradients associated with highly localized heating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 235
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

This work was supported by the Defense Advanced. Research Projects Agency, the, Department of the Air Force, in part under a specific program sponsored by the, Air Force Office of Scientific Research, and by the Army Research Office.

References

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