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Study of Molybdenum-Alusil Interdiffusion Kinetics and Contact Resistance for VLSI Applications

Published online by Cambridge University Press:  26 February 2011

R. N. Singh ,
D. M. Brown ,
M. J. Kim  and
G. A. Smith
R. N. Singh
Affiliation:
General Electric Research and Development, Schenectady, N.Y., 12301
D. M. Brown
Affiliation:
General Electric Research and Development, Schenectady, N.Y., 12301
M. J. Kim
Affiliation:
General Electric Research and Development, Schenectady, N.Y., 12301
G. A. Smith
Affiliation:
General Electric Research and Development, Schenectady, N.Y., 12301
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Abstract

Interdiffusion barrier characteristics of molybdenum thin films with Alusil(Al-1% Si) is studied between 733 and 7 63 K via sheet and contact resistance measurements, Rutherford backseattering spectrometry, secondary ion mass spectroscopy, and x-ray diffraction analysis. The results indicate that thermal annealing of Mo/Alusil thin film couples leads to MoAl compound formation initially as a nonplanar front, but extensive annealing results in complete transformation of Alusil to MoAl12 and a significant increase in contact resistance. The interdiffusion kinetics is studied and implications of these observations to VLSI device characteristics is discussed. Based on these results a safe time-temperature processing regime is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 817
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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