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Structure of Sulphur-Passivated InP(100)-(1×1) Surface

Published online by Cambridge University Press:  25 February 2011

Z.H. Lu ,
Y. Tao ,
B.X. Yang ,
X.H. Feng ,
D.F. Mitchell ,
A. Yelon ,
M.J. Graham  and
E. Sacher
Z.H. Lu
Affiliation:
Inst. for Microstructural Sciences, National Research Council, Ottawa, Canada KIA 0R6
Y. Tao
Affiliation:
Dept. of Eng. Phys., Ecole Polytechnique, Montreal, CanadaH3C 3A7
B.X. Yang
Affiliation:
CARS, University of Chicago, Chicago, IL60637, USA
X.H. Feng
Affiliation:
Dept. Chem., University of Western Ontario, London, CanadaN6A 5B7
D.F. Mitchell
Affiliation:
Inst. for Microstructural Sciences, National Research Council, Ottawa, Canada KIA 0R6
A. Yelon
Affiliation:
Dept. of Eng. Phys., Ecole Polytechnique, Montreal, CanadaH3C 3A7
M.J. Graham
Affiliation:
Inst. for Microstructural Sciences, National Research Council, Ottawa, Canada KIA 0R6
E. Sacher
Affiliation:
Dept. of Eng. Phys., Ecole Polytechnique, Montreal, CanadaH3C 3A7
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Abstract

X-ray photoelectron spectroscopy, X-ray photoelectron diffraction, and S K edge X-ray absorption near-edge structure were used to characterize the air-stable S-passivated InP(100)-(lxl) surface prepared in (NH4)2S solution. The results show that one monolayer of sulphur which is bonded only to In is adsorbed on the surface. The S is found to occupy bridge-bonded sites, and the orientation of the In-S bond is determined to be in the [011] azimuth, with an In-S-In bridge-bond angle of about 100°.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 299
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Iyer, R., Chang, R.R., and Lile, D.L., Appl. Phys. Lett. 53, 134 (1988).Google Scholar
2. Lau, W.M., Jin, S., Wu, X.W., and Ingrey, S., J. Vac. Sci. Technol. A 9, 994 (1991).Google Scholar
3. Lu, Z.H., Graham, M.J., Feng, X.H., and Yang, B.X., Appl. Phys. Lett. (in press).Google Scholar
4. Tao, Y., Yelon, A., Sacher, E., Lu, Z.H., and Graham, M.J., Appl. Phys. Lett. (in press).Google Scholar
5. Sandroff, C.J., Nottenburg, R.N., Bischoff, S.C., and Bhat, R., Appl. Phys. Lett. 51, 33 (1987); J.F. Fan, H. Ogigawa, and Y. Nannichi, Jpn. J. Appl. Phys. 27, L1331 (1988).Google Scholar
6.For a recent review, see Chambers, S.A., Advances in Physics 40, 357 (1991).Google Scholar
7.See, for example, Haase, J., in Photoemission and Absorption Spectroscopy of Solids and Interfaces with Synchrotron Radiation, edited by Campagna, M. and Rosei, R. (North-Holland, New York, 1990), p. 302.Google Scholar