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Structural Characterization of InAlAs/InGaAs Layers Grown on InP Patterned Substrates

Published online by Cambridge University Press:  22 February 2011

F. Peiro ,
A. Cornet ,
J.R. Morante ,
K. Zekentes  and
A. Georgakilas
F. Peiro
Affiliation:
LCMM. Dept. Física Aplicada i Electrónica. U. Barcelona. Diagonal 645-647. 08028 Barcelona, Spain Serveis Científico-Tènics. U. Barcelona. L. So1è i Sabarís, 1-3. 08028 Barcelona, Spain
A. Cornet
Affiliation:
LCMM. Dept. Física Aplicada i Electrónica. U. Barcelona. Diagonal 645-647. 08028 Barcelona, Spain
J.R. Morante
Affiliation:
LCMM. Dept. Física Aplicada i Electrónica. U. Barcelona. Diagonal 645-647. 08028 Barcelona, Spain
K. Zekentes
Affiliation:
FORTH. IESL. 71110 Heraklion. Crete, GREECE
A. Georgakilas
Affiliation:
FORTH. IESL. 71110 Heraklion. Crete, GREECE
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Abstract

In this work we present structural characterization by both Scanning and Transmission Electron Microscopy of InAlAs/InGaAs heterostructures grown on InP substrates. Our attention is devoted to study the two main problems limiting the application of these structures as devices: the presence of defects on the epilayer and the growth habit at theedges of the well. Our results show that a different faceting between the two <110> orthogonal directions develops during the growth and that a high density of defects is observed just at the intersection between the layers grown inside the windows and on the walls. Moreover, the presence of a polycrystalline layer developing over the mask indicates that a selective growth occurs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 59
Copyright
Copyright © Materials Research Society 1994

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References

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