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Structural Characterization and Schottky Barrier Height Measurements of Epitaxial NiSi2 on Si

Published online by Cambridge University Press:  26 February 2011

B. D. Hunt ,
L. J. Schowalter ,
N. Lewis ,
E. L. Hall ,
R. J. Hauenstein ,
T. E. Schlesrnger ,
T. C. McGill ,
Masako Okamoto  and
Shin Hashimoto
B. D. Hunt
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenec-tady, NY 12301
L. J. Schowalter
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenec-tady, NY 12301
N. Lewis
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenec-tady, NY 12301
E. L. Hall
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenec-tady, NY 12301
R. J. Hauenstein
Affiliation:
California Institute of Technology, Pasedena, CA 91125
T. E. Schlesrnger
Affiliation:
California Institute of Technology, Pasedena, CA 91125
T. C. McGill
Affiliation:
California Institute of Technology, Pasedena, CA 91125
Masako Okamoto
Affiliation:
Physics Dept., SUNY, Albany, NY 12222.
Shin Hashimoto
Affiliation:
Physics Dept., SUNY, Albany, NY 12222.
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Abstract

Single crystal NiSi2 films of type A and type B orientations with thicknesses ranging from 70–600Å have been grown on (111), n-type Si substrates. TEM and channeling measurements indicate that these films are of excellent epitaxial quality with uniform orientations over the entire range of observation. HRTEM studies show regular and atomically abrupt interfaces for both NiSi2 orientations with occasional localized planar defects. I-V and photoresponse measurements of the Schottky barrier heights(SBH) of the type A films yield consistent values of 0.62±.01eV. However, for type B films I-V measurements give a SBH of 0.69±.01eV while the photoresponse results give 0.77±.05eV. This discrepancy can be explained quantitatively by a phenomenological model in which a small percentage of low barrier height regions is incorporated into the type B films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 479
Copyright
Copyright © Materials Research Society 1986

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References

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