Hostname: page-component-6bf8c574d5-xtvcr Total loading time: 0 Render date: 2025-02-19T03:53:16.242Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Characterization of Polycrystalline Semiconductor Materials

Published online by Cambridge University Press:  28 February 2011

Richard J. Matson  and
Y. Simon Tsuo
Richard J. Matson
Affiliation:
Solar Energy Research InstituteGolden, Colorado 80401, USA
Y. Simon Tsuo
Affiliation:
Solar Energy Research InstituteGolden, Colorado 80401, USA
Get access

Abstract

Secondary electron imaging, electron channeling and electron-beaminduced current (EBIC) are used alternately in a scanning electron microscope to characterize and correlate the morphology, crystallographic orientation, and electronic quality (types and spatial distribution of defects) of individual grains in polycrystalline semiconductor samples. The technique is discussed in some detail, and a number of applications and results in the study of edge-supported-pulling (ESP) silicon sheet and low-angle silicon sheet (LASS) materials are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 567
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Holt, D. B., in Quantitative Scanning Electron Microscopy, edited by Holt, D. B., Muir, M. D., Grant, P. R., and Boswarva, I. M., (Academic Press, London, 1974), p. 213.Google Scholar
3 Leamy, H. J., J. Appl. Phys. 53, R51 (1982).CrossRefGoogle Scholar
4 Russell, P. E., Ph.D. thesis, University of Florida, 1982.Google Scholar
5 Hacket, W. H. Jr,; J. Appl. Phys. 43, 1649 (1972).Google Scholar
6 Burk, D. E., Kanner, S., Muyshondt, J. E., Shaulis, D. S., and Russell, P. E., J. Appl. Phys. 54, 169 (1983).Google Scholar
6 Russell, p. E., Herrington, C. R., and Matson, R. J., Technology in Review 71, 3 (1983).Google Scholar
7 Matson, J., Scanning Electron Microscopy/1984 (SEM, Inc., O'Hare, ILL 1984) p. 625.Google Scholar
8 Joy, D. C., Newbury, D. E., and Davidson, D. L., J. Appl. Phys. 53, R81 (1982).Google Scholar
9 Ciszek, T. F., Silicon Processinq for Photovoltaics, edited by Khattak, C. P. and Ravi, K. V. (Elsevier Science Publishing, New York, 16985) p. 131.Google Scholar
10 Tsuo, S., Hurd, J. L., Matson, R. J., and Ciszek, T. F., IEEE-ED ED–31, 11614 (1984).Google Scholar
11 Tsuo, Y. S. and Milstein, J. B., Appl. Phys. Lett. 45, 971 (1984).Google Scholar
12 Tsuo, Y. S., Matson, R. J., Milstein, J. B., and Schuyler, T. W., J. Crystal Growth (in press).Google Scholar