Hostname: page-component-6bf8c574d5-h6jzd Total loading time: 0.001 Render date: 2025-02-15T08:45:14.697Z Has data issue: false hasContentIssue false
  • English
  • Français

Stresses and Adhesion of Thin Polycrystalline 3C SiC Films Grown by CVD on Silicon Substrates

Published online by Cambridge University Press:  22 February 2011

L.M. Ivanova ,
V.V. Kovalenko  and
T.M. Tkacheva
L.M. Ivanova
Affiliation:
The A.A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninski pr. 49, 117334, Moscow, Russia
V.V. Kovalenko
Affiliation:
The A.A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninski pr. 49, 117334, Moscow, Russia
T.M. Tkacheva
Affiliation:
The A.A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninski pr. 49, 117334, Moscow, Russia
Get access

Abstract

SiC thin films less than 1 μm thick are grown by thermal decomposition of CH3SiC13 in a hydrogen atmosphere in an open CVD system. The interface stress is shown to be depend on the growth conditions. The optimal conditions for the preparation of uniform SiC films have been determined. Thermal annealing of the films has also been studied, and the conditions that provide for relaxation of the interface stresses are determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 327: Symposium N – Covalent Ceramics II: Non-Oxides , 1993 , 305
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Miyajima, T., Saski, K., Furukawa, S.. Proc. ICACSC '91 (4th International Conference on Amorphous Crystalline Silicon Carbide and Others IV-IV Materials) Santa Clara, 1991 Google Scholar
2 Shimizu, H., Naito, K., Ishio, S.. Proc. ICACSC '91 (4th International Conference on Amorphous Crystalline Silicon Carbide and Others IV-IV Materials) Santa Clara, 1991 Google Scholar
3 Rahman, M.M., Yang, C.Y.-W., Harris, G.L., eds. Amorphous and Crystalline Silcon Carbide II by Fukazawa, T., Sasaki, K., Furukawa, S.. (2nd Int. Conf. Proc., Santa Clara, 1988) 49.Google Scholar
4. Rahman, M.M., Yang, C.Y.-W., Harris, G.L., eds. Amorphous and Crystalline Silcon Carbide II by Chinone, Y., Ezaki, S., Fujita, F., Matsumoto, K.. (2nd Int. Conf. Proc., Santa Clara, 1988) 198.Google Scholar
5 Rahman, M.M., Yang, C.Y.-W., Harris, G.L., eds. Amorphous and Crystalline Silcon Carbide II by Nishikuni, M., Dohjoh, H., Ninomiya, K. et al. (2nd Int. Conf. Proc., Santa Clara, 1988) 54.Google Scholar
6 Koike, K., Ono, H., Homma, T. et al. Proc. ICACSC '91 (4th International Conference on Amorphous Crystalline Silicon Carbide and Others IV-IV Materials) Santa Clara, V. 10, (1991).Google Scholar
7 Ivanova, L.M. andPletushkin, A.A.. Growth of Policrystalline SiC by Thermal Decomposition of MeSiCl (Poluchenie polikristallicheskogo karbida kremniya termicheskim raziozeniem metiltrikhlorsilana) Kiev, Naukova, Dumka, 151 (1966).Google Scholar
8 Novikova, S.N.. Thermal Expansion of Solids (Teplovoe rasshiremie tverdykh tel) Hauka, Moscow, 228 (1974).Google Scholar
9 Gorin, S.N. andPletushkin, A.A.. Crystal Growth (Rost kristallov) Nauka, Moscow, 1965 V. 6, p. 210.Google Scholar