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Strain-Induced Diffusion in Strained Sige/Si Heterostructures

Published online by Cambridge University Press:  17 March 2011

Y.S. Lim ,
J.Y. Lee ,
H.S. Kim  and
D.W. Moon
Y.S. Lim
Affiliation:
Dept. of Mater. Sci. & Eng., KAIST, 337-1 Gusung-dong, Yusung-ku, Daejon 305-701, Korea
J.Y. Lee
Affiliation:
Dept. of Mater. Sci. & Eng., KAIST, 337-1 Gusung-dong, Yusung-ku, Daejon 305-701, Korea
H.S. Kim
Affiliation:
SiGe Device Team, ETRI, 161 Kajong-dong, Yusung-ku, Daejon 305-350, Korea
D.W. Moon
Affiliation:
Surface Analysis Group, KRISS, 1 Doryong-dong, Yusung-ku, Daejon 305-340, Korea
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Abstract

Diffusivity of a strained heterostructure was theoretically investigated, and general diffusion equations with strain potential were deduced. There was an additional diffusivity by the strain potential gradient as well as by the concentration gradient. The strain-induced diffusivity was a function of concentration, and its temperature dependence was formulated. The activation energy of the strain-induced diffusivity was measured by high-resolution transmission electron microscopy. This result can be generally applied for the investigation of the diffusion in strained heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P11.2
Copyright
Copyright © Materials Research Society 2001

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