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Step Coverage and Material Properties of CVD Titanium Nitride Films from TDMAT and TDEAT Organic Precursors

Published online by Cambridge University Press:  21 February 2011

Anthony J. Toprac ,
Shi-Qing Wang ,
Joshua Musher  and
Roy G. Gordon
Anthony J. Toprac
Affiliation:
SEMATECH, 2706 Montopolis, Austin, TX 78741–6499
Shi-Qing Wang
Affiliation:
SEMATECH, 2706 Montopolis, Austin, TX 78741–6499 Also with Fairchild Research Center, National Semiconductor, Santa Clara, CA 95052
Joshua Musher
Affiliation:
Harvard University, Dept. of Chemistry, Cambridge MA 02138
Roy G. Gordon
Affiliation:
Harvard University, Dept. of Chemistry, Cambridge MA 02138
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Extract

Titanium nitride (TiN) films serve an important function as an adhesion layer and diffusion barrier in contact and via plug structures of ULSI devices. In this work, TiN films were deposited by chemical vapor deposition (CVD) at atmospheric pressure using the tetrakis (dimethylamido) titanium (TDMAT) and tetrakis (diethylamido) titanium (TDEAT) organic precursors over a range of temperatures and ammonia partial pressures. The step coverage and morphology of these films was evaluated at these various conditions by SEM of cross-sectioned contacts. In addition, material properties such as resistivity. surface roughness, and stoichiometry were assessed at some of the operating conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 323
Copyright
Copyright © Materials Research Society 1995

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References

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