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The Staebler-Wronski Effect and 1/f Noise in Amorphous Silicon

Published online by Cambridge University Press:  17 March 2011

T. J. Belich  and
J. Kakalios
T. J. Belich
Affiliation:
School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455
J. Kakalios
Affiliation:
School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455
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Abstract

Experimental measurements of the Q-function (a comparison of the conductivity and thermopower activation energies) and the non-Gaussian statistical character of the 1/f noise in n-type doped a-Si:H as a function of light soaking (the Staebler-Wronski effect) are reported. There is a significant decrease in the non-Gaussian statistical character of the 1/f noise following light soaking of a device quality film, consistent with a slight increase in the long-range disorder. However, there is no change in the Q-function following light exposure, indicating that there is no significant increase in the long-range disorder.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A14.5
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
2. Dersch, H., Stuke, J. and Beichler, J., Appl. Phys. Lett. 38, 456 (1980).10.1063/1.92402Google Scholar
3. Pankove, J. I. and Berkeyheiser, J. E., Appl. Phys. Lett. 37, 705 (1980).Google Scholar
4. Carlson, D. E., Appl. Phys. A 41, 305 (1986).10.1007/BF00616053Google Scholar
5. Jackson, W. B. and Kakalios, J., Phys. Rev. B 37, 1020 (1988).10.1103/PhysRevB.37.1020Google Scholar
6. Branz, H. and Silver, M., Phys. Rev. B 42, 7420 (1990).Google Scholar
7. Hauschildt, D., Fuhs, W. and Mell, H., Phys. Stat. Sol. (B) 111, 171 (1982).10.1002/pssb.2221110118Google Scholar
8. Fedders, P. A., Fu, Y. and Drabold, D. A., Phys. Rev. Lett. 68, 1888 (1992).10.1103/PhysRevLett.68.1888Google Scholar
9. Fritzsche, H., Solid State Comm. 94, 953 (1995).10.1016/0038-1098(95)00220-0Google Scholar
10. Brodsky, M. H., Solid State Comm. 36, 55 (1980); R. Zallen and H. Scher, Phys. Rev. B 4, 4471 (1971).Google Scholar
11. Kakalios, J. and Street, R. A., Phys. Rev. B 34, 6014 (1986).Google Scholar
12. Parman, C. E., Israeloff, N. E. and Kakalios, J., Phys. Rev. Lett. 69, 1097 (1992); Phys. Rev. B 47, 12578 (1993).Google Scholar
13. Overhof, H. and Beyer, W., Philos. Mag. B 43, 433 (1981); H. Overhof, Materials Research Society Symposia Proceedings (Materials Research Society, Pittsburgh, PA) 258, 681 (1992).Google Scholar
14. Jones, D. I., LeComber, P. G. and Spear, W. E., Philos. Mag. 36, 541 (1977).Google Scholar
15. Quicker, D. and Kakalios, J., Phys. Rev. B 60, 2449 (1999).10.1103/PhysRevB.60.2449Google Scholar
16. Dyalsingh, H. M., Khera, G. M. and Kakalios, J., Materials Research Society Symposia Proceedings (Materials Research Society,Pittsburgh, PA) 377, 577 (1995).Google Scholar
17. West, P. W., Quicker, D., Dyalsingh, H. M. and Kakalios, J., Materials Research Society Symposia Proceedings (Materials Research Society, Pittsburgh, PA) 467, 215 (1997).Google Scholar
18. Dyalsingh, H.M., Khera, G.M., and Kakalios, J., in Amorphous Silicon Technology-1995, edited by Hack, Michael, Schiff, Eric A., Madan, Arun, Powell, Martin, and Matsuda, Akihisa (Mater. Res. Soc. Proc. 377, Pittsburgh, PA, 1995), pp. 577–582.Google Scholar
19. Beyer, W. and Overhof, H., Solid State Commun. 31, 1 (1979).10.1016/0038-1098(79)90521-0Google Scholar
20. Dyalsingh, H.M. and Kakalios, J., Phys. Rev. B 54, 7630 (1996).Google Scholar
21. Quicker, D., West, P.W., and Kakalios, J., in Amorphous Silicon Technology-1997, edited by Wagner, Sigurd, Hack, Michael, Schiff, Eric A., Schropp, Ruud, and Schimizu, Isamu (Mater. Res. Soc. Proc. 467, Pittsburgh, PA, 1997), pp. 73–78.Google Scholar
22. Parman, C. E., Israeloff, N. E. and Kakalios, J., Phys. Rev. B 44, 8391 (1991); Lisa M. Lust and J. Kakalios, Phys. Rev. Lett. 75, 2192 (1995).Google Scholar
23. Fan, J. and Kakalios, J., Phys. Rev. B 47, 10903 (1993); Philos. Mag. B 69, 595 (1994).10.1103/PhysRevB.47.10903Google Scholar
24. Lust, Lisa M. and Kakalios, J., Materials Research Society Symposia Proceedings (Materials Research Society, Pittsburgh, PA) 377, 401 (1995).Google Scholar