Hostname: page-component-6bf8c574d5-2jptb Total loading time: 0 Render date: 2025-02-18T04:33:29.124Z Has data issue: false hasContentIssue false
  • English
  • Français

Six C1-x Electroluminescence Structures

Published online by Cambridge University Press:  26 February 2011

C. Falcony ,
A. Ortiz  and
A. Sanchez
C. Falcony
Affiliation:
Centro de Investigaciones y Estudios Avanzados del I.P.N., Depto. de Fisica, Apdo. Postal 14-740, 07000, Mexico, D.F
A. Ortiz
Affiliation:
Instituto de Investigaciones en Materiales, UNAM., Apdo. Postal 70-360, Coyoac´n 04510, México, D.F
A. Sanchez
Affiliation:
Instituto de Investigaciones en Materiales, UNAM., Apdo. Postal 70-360, Coyoac´n 04510, México, D.F
Get access

Abstract

The electroluminescent characteristics of multilayer structures involving Si C as the light emitting material are reported. The structures studieA have two types of multilayer stacks a) Si rich Si02/ Si02/- Six Cl v and b) Si rich SiO2 /Six C1-x, Both type of structures were deposite on an n-type silicon surstrt-e and conductive indium oxide was deposited on top of the structure to define the electroluminescent device. The light emitted spectra present two broad peaks at ∼530 and 670nm when an undoped Si C layer is integrated in the structure. However, when a boron dopedX SixC1-x is used, the light emission at larger wavelengths is dominant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 435
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Refrences

1. Kruangam, D., Deguchi, M., Hattori, Y., Toyama, T., Okamoto, H. and Hamakawa, Y., Procc. at the 1987 Spring Meeting of the Materials Research Soc., Anaheim, Ca.Google Scholar
2. Alvarez, F., Fragnilo, H.L. and Chambouleyron, I., J.Appl.Phys.63, p.244 (1988).Google Scholar
3. Robbins, D.J., Falcony, C., DiMaria, D.J.. Dong, D.W., Degelermo, J.F., Chang, I.F. and Dove, D.B., IEEE Electron Dev. Letters, Vol.EDL-3, p.148 (1982).Google Scholar
4. Robbins, D.J., DiMaria, D.J., Falcony, C. and Dong, D.W.. J.Appl.Phys.54, 4553(1983).Google Scholar
5. Dong, D., Irene, E.A. and Young, D.R., J.Electrochem.Soc. 125,819 (1978).Google Scholar
6. Pan, C.A. and Ma, T.P., J.Electrochem. Soc. 128,1953 (1981)Google Scholar