Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-19T12:11:48.814Z Has data issue: false hasContentIssue false
  • English
  • Français

Site-Control Technology for InAs Quantum Dot Formation by Direct Deposition of Indium Nano-Dots with a Nano-Jet Probe

Published online by Cambridge University Press:  01 February 2011

Shunsuke Ohkouchi ,
Yusui Nakamura ,
Hitoshi Nakamura  and
Kiyoshi Asakawa
Shunsuke Ohkouchi
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5–5 Tokodai, Tsukuba, Ibaraki 300–2635, Japan
Yusui Nakamura
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5–5 Tokodai, Tsukuba, Ibaraki 300–2635, Japan
Hitoshi Nakamura
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5–5 Tokodai, Tsukuba, Ibaraki 300–2635, Japan
Kiyoshi Asakawa
Affiliation:
The Femtosecond Technology Research Association (FESTA), 5–5 Tokodai, Tsukuba, Ibaraki 300–2635, Japan
Get access

Abstract

We propose a new nano-probe-assisted technique which enables the formation of site-controlled InAs quantum dots (QDs). High-density two-dimensional indium (In) nano-dot arrays on a GaAs substrate were fabricated by using a specially designed atomic-force-microscope (AFM) probe (the Nano-Jet Probe). This developed probe has a hollow pyramidal tip with a sub-micron size aperture on the apex and an In-reservoir tank within the stylus. By applying a voltage pulse between the pyramidal tip and the sample, In clusters were extracted from the reservoir tank within the stylus through the aperture, resulting in the In nano-dot formation. These In nano-dots can be directly converted to InAs QD arrays by subsequent irradiation of arsenic flux.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T3.29
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Waks, E., Inoue, K., Santori, C., Fattal, D., Vuckovic, J., Solomon, G. S., and Yamamoto, Y., Nature 420 762 (2002).Google Scholar
[2] Imamoglu, A., Awschalom, D. D., Burkard, G., DiVincenzo, D. P., Loss, D., Sherwin, M., and Small, A., Phys. Rev. Lett. 83 4204 (1999).Google Scholar
[3] Sugimoto, Y., Ikeda, N., Carlsson, N., Asakawa, K., Kawai, N., and Inoue, K., J. Appl. Phys. 91 (2002) 922.Google Scholar
[4] Koguchi, N., Ishige, K., and Takahashi, S., J. Vac. Sci. & Technol. B11 787 (1993).Google Scholar
[5] Nakamura, Y., Ikeda, N., Sugimoto, Y., Nakamura, H., Ohkouchi, S., and Asakawa, K., Physca. Stat. Sol. (b) 238 237 (2003).Google Scholar