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Single Step Low Temperature In-Situ Substrate Cleaning for Silicon Processing

Published online by Cambridge University Press:  25 February 2011

Juergen Ramm ,
Eugen Beck ,
Franz-Peter Steiner ,
Ralph E. Pixley  and
Ignaz Eisele
Juergen Ramm
Affiliation:
Balzers Ltd., FL-9496 Balzers, Principality of Liechtenstein
Eugen Beck
Affiliation:
Balzers Ltd., FL-9496 Balzers, Principality of Liechtenstein
Franz-Peter Steiner
Affiliation:
Balzers Ltd., FL-9496 Balzers, Principality of Liechtenstein
Ralph E. Pixley
Affiliation:
Physik-Institut der Universität, CH-8001 Zürich, Switzerland
Ignaz Eisele
Affiliation:
Universität der Bundeswehr, D-8014 Neubiberg, Germany
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Abstract

Silicon wafers as obtained from the manufacturer are immersed in a large area argon/hydrogen plasma for surface cleaning. The plasma discharge is maintained between a heated cathode and the grounded process chamber at discharge voltages of about 30 V for which discharge currents up to 100 A can be chosen. In this regime, neither the chamber walls nor the substrates are sputtered. Chemical reactions at the wafer surface are assumed to be mainly stimulated by low energy electron bombardment. The etch rates for diamond-like carbon (DLC) on silicon wafers were determined for selected discharge parameters and compared with the previously obtained results for SiO2. It was found that 5 minutes in-situ cleaning prepares the silicon wafers for homoepitaxy at 500 °C and higher substrate temperatures, whereas a short anneal at 500 °C was necessary to obtain low temperature homoepitaxy at 300 °C on (100) and 400 °C on (111) silicon. This seems to be due to hydrogen passivation of silicon during the cleaning procedure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 249
Copyright
Copyright © Materials Research Society 1992

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References

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