Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-15T09:07:15.986Z Has data issue: false hasContentIssue false
  • English
  • Français

Sequential Operation of Three Distinct Misfit Dislocation Introduction Mechanisms in an Epitaxial Bilayer Film

Published online by Cambridge University Press:  10 February 2011

V. Gopal ,
E. P. Kvam ,
E.-H. Chen  and
J. M. Woodall
V. Gopal
Affiliation:
Purdue University, School of Materials Engineering, W. Lafayette, IN 47907
E. P. Kvam
Affiliation:
Purdue University, School of Materials Engineering, W. Lafayette, IN 47907
E.-H. Chen
Affiliation:
Yale University, Department of Electrical Engineering, New Haven, CT 06520.
J. M. Woodall
Affiliation:
Yale University, Department of Electrical Engineering, New Haven, CT 06520.
Get access

Abstract

Mismatch stress relaxation mechanisms in bilayer films of (In, Al)As on InAs on GaP have been examined. Initial edge (90°) misfit dislocations at the InAs/GaP interface appear to be introduced directly at island edges during initial stages of growth. The incomplete mismatch compensation is taken up by later introduction of glissile (60°) dislocations, usually in pairs which combine to form edge dislocations. The edge dislocations in the interface then move laterally to equalize their spacings. The upper (In, Al)As capping layer, which is tensile strained to match the relaxed InAs, exhibits a different mechanism of misfit dislocation introduction. Threading dislocations move by climb, directly introducing sessile edge dislocations at the buried interface. It is believed this is the first time that this mechanism has been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 157
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Frank, F.C. and van der Merwe, J.H., Proc. R. Soc. London, A198, 205, 210, (1949).Google Scholar
2. Matthews, J.W., Mader, S., and Light, T.B., J. Appl. Phys., 41, 3800, (1970).Google Scholar
3. Bauer, E., Z Kristallogr., 110, 372, (1958).Google Scholar
4. Eaglesham, D.J., and Cerullo, M., Phys. Rev. Lett., 64, 1943, (1990);Google Scholar
Elman, B., Koteles, E.S., Melman, P., Jagannath, C., Lee, J., and Dugger, D., Appl Phys. Lett., 55, 1659, (1989).Google Scholar
5. Gopal, V., Kvam, E.P., Chin, T.P, and Woodall, J.M, Appl. Phys. Lett. 72, 2319, (1998).Google Scholar
6. Johnson, H.T., and Freund, L.B., J. Appl. Phys., 81, 6081, (1997).Google Scholar
7. Legoues, F.K., Reuter, M.C., Tersoff, J., Hammar, M., and Tromp, R.M., Phys. Rev Lett., 73, 300, (1994).Google Scholar
8. Kvam, E.P., Maher, D.M., and Humphreys, C.J., J. Mater. Res., 5, 1900, (1990).Google Scholar