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Schottky Barriers on a-Si:H,F/a-Si,Ge:H,F Superlattices

Published online by Cambridge University Press:  26 February 2011

V. Chu ,
J. P. Conde ,
S. Aljishi ,
D. S. Shen ,
Z E. Smith  and
S. Wagner
V. Chu
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, New Jersey 08544
J. P. Conde
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, New Jersey 08544
S. Aljishi
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, New Jersey 08544
D. S. Shen
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, New Jersey 08544
Z E. Smith
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering Princeton University, Princeton, New Jersey 08544
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Abstract

We report measurements of Schottky barrier heights and minority carrier mobilitylifetime products of multilayer structures composed of a-Si:H,F and a-Si,Ge:H,F. These layers are grown by r.f. glow discharge decompostion of SiF4, GeF4, and H2 in the a-Si,Ge:H,F (well) layer and of SiF4 and H2 in the a-Si:H,F (barrier) layer.

Schottky barrier height ΦB of Pt is measured using internal photoemission measurements. The minority carrier mobility-lifetime product (μτ)p is extracted from a fit of the voltage dependence of internal quantum efficiency to the Hecht expression. Both ΦB and (μτ)p are measured as a function of barrier and well thicknesses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 375
Copyright
Copyright © Materials Research Society 1987

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References

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