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Room-Temperature HF Vapour-Phase Cleaning for LPCVD EPI of Si and SiGe

Published online by Cambridge University Press:  25 February 2011

A.E.T. Kuiper  and
E.G.C. Lathouwers
A.E.T. Kuiper
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
E.G.C. Lathouwers
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
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Abstract

Silicon dioxide films can be etched in a mixture of HF and H2O vapour. This process can be performed at reduced pressure, which has allowed us to develop a highvacuum compatible etch facility. Channelling-RBS analysis demonstrates the feasibility of epitaxial LPCVD of Si and SiGe layers at 600°C on Si(100) substrates that previously have been vapour-etched in situ at room temperature. With RBS also kinetic information about these deposition reactions can be derived.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 473
Copyright
Copyright © Materials Research Society 1992

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References

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