Hostname: page-component-6bf8c574d5-gr6zb Total loading time: 0 Render date: 2025-02-14T12:10:23.678Z Has data issue: false hasContentIssue false
  • English
  • Français

Role of the Substrate Doping in the Activation of Fe2+ centers in Fe implanted InP

Published online by Cambridge University Press:  01 February 2011

T. Cesca ,
A. Gasparotto ,
G. Mattei ,
A. Verna ,
B. Fraboni ,
G. Impellizzeri  and
F. Priolo
T. Cesca
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
A. Gasparotto
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
G. Mattei
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
A. Verna
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
B. Fraboni
Affiliation:
INFM and University of Bologna, Physics Dept., V.le Berti-Pichat 6/2, I-40137 Bologna, Italy.
G. Impellizzeri
Affiliation:
INFM and University of Catania, Physics and Astronomy Dept., Via S. Sofia 64, I-95123 Catania, Italy.
F. Priolo
Affiliation:
INFM and University of Catania, Physics and Astronomy Dept., Via S. Sofia 64, I-95123 Catania, Italy.
Get access

Abstract

We have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The lattice location of the Fe atoms and the effect of postimplantation annealing treatments have been studied by PIXE-channeling measurements. I-V, CV and DLTS analyses have been used to characterize the electrical properties related to the presence Fe2+/3+ deep traps. The results show that the background n-doping density play a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers. The same effect has been observed in samples containing Fe concentrations both above and below the Fe solubility threshold in InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E1.5
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Bishop, S.G. in Deep centers in semiconductors, edited by Pantelides, S., (Gordon and Breach, New York, 1986) p. 541.Google Scholar
2 Troccoli, M., Scamarcio, G., Fraboni, B., Priolo, F. and Gasparotto, A., Semicond Sci. Technol. 16, L1 (2001).Google Scholar
3 Gasparotto, A., Carnera, A., Paccagnella, A., Fraboni, B., Priolo, F., Gombia, E. and Mosca, R., Appl. Phys. Lett. 75, 668 (1999).Google Scholar
4 Cesca, T., Gasparotto, A., Mattei, G., Ramazzo, V., Boscherini, F., Fraboni, B., Priolo, F., Ciatto, G., D'Acapito, F. and Bocchi, C., Phys. Rev. B 68, 224113 (2003).Google Scholar
5 Feldman, L. C., Mayer, J. W. and Picraux, S. T., Materials Analysis by Ion Channeling, Academic Press (1982).Google Scholar
6 Lampert, M. A. and Mark, P., Current Injection in Solids, Academic Press, New York, 1970.Google Scholar
7 Blood, P. and Orton, J., The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press, London (1992).Google Scholar
8 Kimerling, L. C., J. Appl. Phys. 45 1839 (1974).Google Scholar
9 Look, D. C. and Sizelove, J. R., J. Appl. Phys. 78 2848 (1995).Google Scholar
10 Jansen, R.W., Phys. Rev. B 41 7666 (1994).Google Scholar