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Residual Stress Analysis of Al Alloy Thin Films by X-Ray Diffraction as a Function of Film Thickness

Published online by Cambridge University Press:  22 February 2011

Carla J. Shute ,
J. B. Cohen  and
D. A. Jeannottea
Carla J. Shute
Affiliation:
Northwestern University, Department of Materials Science and Engineering, Evanston, IL 60208.
J. B. Cohen
Affiliation:
Northwestern University, Department of Materials Science and Engineering, Evanston, IL 60208.
D. A. Jeannottea
Affiliation:
IBM, IBM-U.S. Technology Products, Hopewell Junction, NY 12533.
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Abstract

Residual stress has been measured as a function of layer thickness in thin films of an Al alloy on oxidized Si by the x-ray “d” versus sin2ψ technique. Samples with and without a passivation layer were examined. The results show an increase in residual stress with decreasing film thickness for the passivated samples and indicates that the interface between the metal film and SiO2 may be a region of high stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 29
Copyright
Copyright © Materials Research Society 1989

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