Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-19T12:08:24.139Z Has data issue: false hasContentIssue false
  • English
  • Français

Recovery Process of Light-Induced Spins in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films

Published online by Cambridge University Press:  15 February 2011

Jinyan Zhang ,
Qing Zhang ,
Minoru Kumeda  and
Tatsuo Shimizu
Jinyan Zhang
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Qing Zhang
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Tatsuo Shimizu
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Get access

Abstract

The influences of sub-gap illumination and thermal annealing on the light-induced neutral dangling bonds (DB's) created in the fast process (FDB's) and those created in the slow process (SDB's) are prominently different in Si-rich a-Si1-xNx:H. The results of photobleaching show that the sub-gap illumination annihilates FDB's, more effectively at 77 K, whereas it appears not to affect SDB's, suggesting that FDB's are produced by a carrier capture at preexisting charged DB's. The annealing behaviors for both FDB's and SDB's are in agreement with the monomolecular kinetics. The attempt-to-anneal frequency, ν0, is ∼ 103 Hz for FDB's and ∼ 107 Hz for SDB's. Annealing-time dependence of the density of light-induced spins at various annealing temperatures can be fit with a distribution of annealing activation energies. In addition, clearly separated peaks of the distribution of annealing activation energies related to FDB's and SDB's are observed. A comparison indicates that SDB's have a nature similar to the light-induced metastable spins in a-Si:H, which are likely to be produced by a creation of new defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 367
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Warren, W.L., Kanicki, J., Rong, F.C., Buchwald, W.R. and Harmats, M., Mater. Res. Soc. Symp. Proc. 242, 687 (1992).Google Scholar
2. Robertson, J., Philos. Mag. B 69, 307 (1994).Google Scholar
3. Crowder, M.S., Tober, E.D., and Kanicki, J., Appl. Phys. Lett. 57, 1995 (1990).Google Scholar
4. Fritzcshe, H. and Nakayama, Y., Philos. Mag. B 69, 359 (1994).Google Scholar
5. Kumeda, M., Sugimoto, A., Zhang, J., Ozawa, Y., and Shimizu, T., Jpn. J. Appl. Phys. 32, LI046 (1993).Google Scholar
6. Kumeda, M., Sugimoto, A., Zhang, J., Ozawa, Y., and Shimizu, T., J. Non-Cryst. Solids, 164–166, 1065 (1993).Google Scholar
7. Zhang, J., Zhang, Q., Kumeda, M., and Shimizu, T., Phys. Rev. B 51, 2137 (1995).Google Scholar
8. Stutzmann, M., Jackson, W.B., and Tsai, C.C., Phys. Rev. B 32, 23 (1985).Google Scholar
9. Stutzmann, M., Jackson, W.B., and Tsai, C.C., Phys. Rev. B 34, 63 (1986).Google Scholar
10. Tober, E.D., Kanicki, J., and Crowder, M.S., Appl. Phys. Lett. 59, 1723 (1991).Google Scholar
11. Zhang, Q., Takashima, H., Zhou, J-H., Kumeda, M., and Shimizu, T., Mat. Res. Soc. Symp. Proc. 336, 269 (1994).Google Scholar