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Rapid Annealing of Ion Implanted Silicon Structures using a Radiant Light Source

Published online by Cambridge University Press:  15 February 2011

H.B. Harrison ,
M. Grigg ,
K. T. Short ,
J.S. Williams  and
A. Zylewicz
H.B. Harrison
Affiliation:
Department of Communication and Electronic Engineering, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia.
M. Grigg
Affiliation:
Department of Communication and Electronic Engineering, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia.
K. T. Short
Affiliation:
Department of Communication and Electronic Engineering, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia.
J.S. Williams
Affiliation:
Department of Communication and Electronic Engineering, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia.
A. Zylewicz
Affiliation:
Department of Communication and Electronic Engineering, Royal Melbourne Institute of Technology, Melbourne, 3000, Australia.
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Abstracta

simple radiant light source has been employed to rapidly anneal ion implanted silicon structures at temperatures >1000° C for times of the order of 1–200 sec. Rutherford backscattering and channeling analysis indicated good crystalline lattice recovery and the formation of metastable solid solutions of Sb in Si without observable diffusion broadening of the implanted profile. Diode arrays have been successfully annealed using the technique, with no observable deterioration of the surrounding oxide mask.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 771
Copyright
Copyright © Materials Research Society 1982

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References

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