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Raman Spectroscopy Study of Damage in n+ - GaAs Introduced by H2 and CH4/H2 RIE

Published online by Cambridge University Press:  26 February 2011

I. De Wolf ,
M. Van Hove ,
R.-G. Pereira ,
M. Van Rossum ,
H. E. Maes  and
H. Münder
I. De Wolf
Affiliation:
Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, B-3001, Leuven, Belgium
M. Van Hove
Affiliation:
Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, B-3001, Leuven, Belgium
R.-G. Pereira
Affiliation:
Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, B-3001, Leuven, Belgium
M. Van Rossum
Affiliation:
Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, B-3001, Leuven, Belgium
H. E. Maes
Affiliation:
Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, B-3001, Leuven, Belgium
H. Münder
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich, P.O. Box 1913, D- 5170 Jülich, Germany
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Abstract

Raman spectroscopy is used to study crystal damage and electrical damage in n+-GaAs produced by reactive ion etching (REE). H2 RIE is compared with CH4/H2 RIE and the effect of temperature annealing is studied. The results are compared with C-V analysis. It is found that structural damage introduced by RIE in the surface layers of the sample is larger for the H2 plasma than for the CH4/H2 plasma. Annealing results in a decrease of this structural damage. H2 RIE as well as CH4/H2 RIE cause an increase of the inactive surface region. This increase is found to be larger for the H2 RDE. C-V experiments show that annealing results in a reactivation and associated decrease of the width of the inactive region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 355
Copyright
Copyright © Materials Research Society 1992

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References

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