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Raman spectroscopy studies in InGaN/GaN wurtzite epitaxial films

Published online by Cambridge University Press:  17 March 2011

Maria R. Correia ,
Sérgio Pereira ,
Teresa Monteiro ,
Estela Pereira  and
Eduardo Alves
Maria R. Correia
Affiliation:
Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal
Sérgio Pereira
Affiliation:
Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal
Teresa Monteiro
Affiliation:
Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal
Estela Pereira
Affiliation:
Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal
Eduardo Alves
Affiliation:
I.T.N., Departamento de Física, E.N.10, 2686-935 Sacavém, Portugal
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Abstract

In this work we studied a set of nominally undoped epitaxial InxGa1−xN wurtzite films grown on (0001) sapphire substrates. In order to separate the contribution of the strain and indium content in the phonon mode frequency, indium mole fraction was determined using a strain insensitive method, Rutherford backscattering spectrometry (RBS). Strain was evaluated by comparing the lattice constants measured by X-ray diffraction (XRD) with the relaxed lattice parameters given by Vegard's law. Samples with comparable indium content, but under different states of strain were used as reference. This allowed the behaviour of different Raman shift modes for both, strain and composition to be independently established. We also assess the potentiality of Raman spectroscopy for the evaluation of crystalline quality by comparing the results obtained with the ones provided by other well-established methods such as XRD and RBS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.10
Copyright
Copyright © Materials Research Society 2001

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References

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