Hostname: page-component-6bf8c574d5-xtvcr Total loading time: 0 Render date: 2025-02-14T23:49:51.710Z Has data issue: false hasContentIssue false
  • English
  • Français

Radioactive Isotopes In Photoluminescence Experiments: Identification Of Defect Levels

Published online by Cambridge University Press:  15 February 2011

R. Magerle
R. Magerle*
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78434 Konstanz, Germany
Get access

Abstract

The characteristic life-times of radioactive isotopes can be used to label and identify defect levels in semiconductors which can be detected by photoluminescence (PL). This technique is illustrated with three examples: ZnS doped with radioactive 65Zn by neutron irradiation and GaAs doped with radioactive 111In by ion implantation. Finally we report that doping GaAs with radioactive 71As which decays to stable 71Ga can be used to create GaAs antisites in GaAs in a controlled way and to identify their levels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 3
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Skromme, B. J., Stillman, G. E., Oberstar, J. D., and Chan, S. S., Appl. Phys. Lett. 44, 319 (1984); S. S. Bose, I. Szafranek, M. H. Kim, and G. E. Stillman, Appl. Phys. Lett. 56, 752 (1990).Google Scholar
2. Mandel, G., Phys. Rev. 134, A1073 (1964); D. J. Chadi, Phys. Rev. Lett. 72, 534 (1994), and references therein.Google Scholar
3.See, e.g., Barghava, R. N., J. Cryst. Growth 59, 15 (1982); J. L. Pautrat, J. M. Francou, N. Magnea, E. Molva, and K. Saminadayar, J. Cryst. Growth. 72, 194 (1985).Google Scholar
4. See, e.g., Dean, P. J., Phys. Rev. B 4, 2596 (1971); K. Thonke, H. Klemisch, J. Weber, and R. Sauer, Phys. Rev. B B 24, 5874 (1981); L. Canham, G. Davies, and E. C. Lightowlers, J. Phys. C 13, L757 (1980).Google Scholar
5. See, e.g., Grimmeis, H. G., Janzén, E., Ennen, H., Schirmer, O., Schneider, J., Wömier, R., Holm, C., Sirtl, E., and Wagner, P., Phys. Rev. B 24, 4571 (1981); B. K. Meyer, D. M. Hoffmann, J. R. Niklas, and J.-M. Spaeth, Phys. Rev. B. 36, 1332 (1987).Google Scholar
6. Broser, I. and Franke, K.-H., J. Phys. Chem. Solids 36, 1013 (1965).Google Scholar
7. Magerle, R., Burchard, A., Deicher, M., Kerle, T., Pfeiffer, W. and Recknagel, E., Phys. Rev. Lett. 75, 1594 (1995); R. Magerle, A. Burchard, M. Deicher, and T. Kerle, in Proc. of the 18th Intl. Conf. On Defects in Semiconductors. ed. by Suezawa, M. and H. Katayama- Yoshida (Mat. Sci. Forum 196–201, Trans Tech Publications, Zürich, 1995) p. 1503.Google Scholar
8. ISOLDE is an ion implanter delivering mass separated beams of radioactive isotopes which are produced on-line in the ion source by nuclear reactions with I -GeV protons. See, e.g., Ravn, H. L. and Allardyce, B. W., in Treatise on Heavy-Ion Science, edited by Bromley, D. A. (Plenum, New York, 1989) Vol.8, p. 363.Google Scholar
9. Magerle, R., Burchard, A., Forkel-Wirth, D., and Deicher, M., to be published.Google Scholar
10. Prener, J. S. and Williams, F. E., J. Electrochem. Soc. 103, 342 (1956).Google Scholar
11. Potter, R. M., Aven, M., and Kastner, J., J. Electrochem. Soc. 109, 1154 (1962).Google Scholar
12. Petersen, W. and Nielsen, J., Appl. Phys. Lett. 56, 1122 (1990).Google Scholar
13. Lang, M., Pensl, G., Gebhard, M., Achtziger, N., and Uhrmacher, M., Appl. Phys. A 53, 95 (1991).Google Scholar
14. Daly, S.E., Henry, M.O., Freitag, K., and Vianden, R., J. Phys.: Cond. Matter 6, L643 (1994).Google Scholar
15. Henry, M. O., Daly, S. E., Frehill, C. A., McGlynn, E., McDonagh, C., Alves, E., Soares, J. C., and Forkel-Wirth, D., in Proc. of the 23rd Intl. Conf. On The Physics of Semiconductors ed. by Scheffler, M. and Zimmermann, R. (World Scientific, Singapore, 1996) p. 2713.Google Scholar
16. Moriya, N., Brener, I., Kalish, R., Pfeiffer, W., Deicher, M., Keller, R., Magerle, R., Recknagel, E., Skudlik, H., Wichert, Th., Wolf, H., and ISOLDE Collaboration, J. Appl. Phys. 73, 4248 (1993).Google Scholar
17. Table of Isotopes, edited by Lederer, C. M. and Shirley, V. S. (Wiley, New York, 1978).Google Scholar
18. Pons, D. and Bourgoin, J. C., J. Phys. C 18, 3839 (1985).Google Scholar
19. Properties of Gallium Arsenide, EMIS Data Reviews Series No. 2, (INSPEC, The Institute of Electrical Engineers, London, 1990).Google Scholar
20. for a short review, see Burgoin, J. C., Bardeleben, H. J., and Stievenard, D., J. Appl. Phys. 64, R65 (1988), Section III. H, and references therein.Google Scholar
21. See, e.g., Yu, P. W., Fischer, D.W., and Sizelove, J.R., Semicond. Sci. Technol. 7, 556 (1992).Google Scholar
22. Newman, R. C., Davidson, B. R., Addinall, R., Murray, R., Emmert, J. W., Wagner, J., Götz, W., Roos, G. and Pensl, G., Proc. of the 17th Intl. Conf. On Defects in Semiconductors ed. by Heinrich, H. and Jantsch, W. (Mat. Sci. Forum 143–147, Trans-Tech Publications, Aedermannsdorf, 1994) p. 229.Google Scholar
23. Zang, S. B. and Chadi, D. J., Phys. Rev. Lett. 64, 1789 (1990).Google Scholar