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The Properties of Microcrystalline and Amorphous Silicon Electron Blocking Layers in a-Si Alloy Photoreceptors

Published online by Cambridge University Press:  26 February 2011

A. G. Johncock ,
S. J. Hudgens  and
S. Guha
A. G. Johncock
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
S. J. Hudgens
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
S. Guha
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

Positive charging amorphous silicon alloy photoreceptors require intentionally fabricated electron blocking layers at the photoreceptor/substrate interface. Thin insulating films and lightly boron doped (300ppm) a-Si alloy layers have been previously employed either singly or in multilayers as back blocking layers. We report here, for the first time, the use of thin (≈300Å) heavily doped microcrystalline (≈10 Ω−1 cm−1) Si back blocking layers [1], with enhanced photoreceptor performance. Investigation of the temperature and electric field dependence of the dark decay of photoreceptors with amorphous or microcrystalline silicon back blocking layers as a function of blocking layer thickness and boron doping is interpreted within a comprehensive model of blocking layer operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 653
Copyright
Copyright © Materials Research Society 1987

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References

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