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Profiling electric fields around dislocations in GaN

Published online by Cambridge University Press:  21 March 2011

D. Cherns ,
C.G. Jiao  and
H. Mokhtari
D. Cherns
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.
C.G. Jiao
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.
H. Mokhtari
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.
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Abstract

Electron holography has been used to measure the electric potential around edge and screw dislocations in n-GaN viewed in a near end-on geometry. It is shown that the potential at edge dislocations is 2V below that in the bulk consistent with a negative charge of 2 electrons/c (c = 0.52nm). Preliminary results, which suggest that screw dislocations are also negatively charged, are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I10.2.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Look, D.C. and Sizelove, J.R., Phys. Rev Lett. 82, 1237 (1999)Google Scholar
2. Hansen, P. J., Strausser, Y. E., Erickson, A. N., Tarsa, E. J., Kozodoy, P., Brazel, E. G., Ibbetson, J. P., Mishra, U., Narayanamurti, V., DenBaars, S. P., and Speck, J. S., Appl. Phys. Lett. 72, 2247 (1999)Google Scholar
3. Youtsey, C., Romano, L. T., and Adesida, I., Appl. Phys Lett. 73, 797, (1998)10.1063/1.122005Google Scholar
4. Barnard, J.S. and Cherns, D., J. Electron Microscopy 49, 281 (2000)10.1093/oxfordjournals.jmicro.a023808Google Scholar
5. Cherns, D. and Jiao, C.G., Phys. Rev. Lett. 87, 5504 (2001)Google Scholar
6. Loretto, M.H., “Electron beam analysis of materials”, (Chapman and Hall, 1984)Google Scholar