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Probing Process-Induced Defects in Si Using Infrared Photoelastic Stress Measurement Technique

Published online by Cambridge University Press:  01 February 2011

X.H. Liu ,
S.P. Wong ,
H.J. Peng ,
N. Ke  and
Shounan Zhao
X.H. Liu
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
S.P. Wong
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
H.J. Peng
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China
N. Ke
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
Shounan Zhao
Affiliation:
Department of Applied Physics, South China University of Technology, Guangzhou, China
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Abstract

The stress depth distribution in the silicon substrate under thin thermal oxide layers has been measured using the photoelastic technique. With the high sensitivity and improved spatial resolution of a newly developed low level birefringence detection system, it is confirmed that the stress distribution deviates significantly from the linear distribution predicted by classical bi-metallic strip theory. The deviation can be attributed to arising from Si self-interstitial injection during the thermal oxidation process. Long term changes in the stress distribution with time have also been observed and the changes can be understood in terms of point defect movements under the stress field in the substrate. Our preliminary results have demonstrated how we can probe microscopic point defect processes in thin film SiO2/Si substrate systems using a macroscopic photoelastic stress measurement technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.38
Copyright
Copyright © Materials Research Society 2005

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References

1 Wong, S. P., Cheung, W.Y., Ke, N., Sajan, M.R., Guo, W.S., Huang, L., Zhao, Shounan, Materials Chemistry and Physics 51 (1997) 157.Google Scholar
2 Peng, H. J., Wong, S. P., Lau, W. F., Ke, N., Zhao, S., Mater. Res. Soc. Symp. Proc. 563, 303 (1999).Google Scholar
3 Herms, M., Fukuzawa, M., Melov, V. G., Schreiber, J., Mock, P., Yamada, M., J. Cryst. Growth 210, 172 (2000).Google Scholar
4 Fukuzawa, M., Yamada, M., J. Cryst. Growth 229, 22 (2001).Google Scholar
5 Wong, S.P., Peng, H.J., Zhao, Shounan, Appl. Phys. Lett. 79, 1628 (2001).Google Scholar
6 Ma, Xianyun, Parker, Mathew, Sudarshan, Tangali S., Appl. Phys. Lett. 80, 3298 (2002).Google Scholar
7 Peng, H. J., Wong, S. P., Zhao, Shounan, J. Phys. D 35, L95 (2002).Google Scholar
8 Peng, H. J., Wong, S. P., Lai, Y. W., Liu, X. H., Ho, H. P., Zhao, Shounan, Rev. Sci. Instrum. 74, 4745 (2003).Google Scholar
9 Liu, X.H., Peng, H.J., Wong, S.P., Zhao, Shounan, Mat. Res. Soc. Symp. Proc. 821, P8.8. (2004).Google Scholar
10 Aben, H. and Guillemet, C., Photoelasticity of Glass, Springer-Verlag, New York 1993.Google Scholar
11 Timoshenko, S., J. Opt. Soc. Am. 11, 233 (1925).Google Scholar
12 Hu, S.M., Appl. Phys. Lett. 27, 165 (1975).Google Scholar
13 Tan, T.Y. and Gosele, U., Appl. Phys. A37, 1 (1985).Google Scholar
14 Kageshima, H. and Shiraishi, K., Phys. Rev. Lett. 81, 5936 (1998).Google Scholar
15 Liu, X.H. and Wong, S.P., unpublished.Google Scholar