Hostname: page-component-6bf8c574d5-t27h7 Total loading time: 0 Render date: 2025-02-16T01:43:44.785Z Has data issue: false hasContentIssue false
  • English
  • Français

Pressure Dependence of Arsenic Diffusivity in Silicon

Published online by Cambridge University Press:  21 February 2011

Eric Nygren ,
Michael J. Aziz ,
David Turnbull ,
James F. Hays ,
John M. Poate ,
Dale C. Jacobson  and
Robert Hull
Eric Nygren
Affiliation:
Allied Corp. Fellow
Michael J. Aziz
Affiliation:
Present address Oak Ridge National Laooratory, Oak Ridge, TN. 37831
David Turnbull
Affiliation:
Harvard Unversity, Cambridge, MA 02138
James F. Hays
Affiliation:
Present address National Science Foundation, Washington, DC 20550
John M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Dale C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Robert Hull
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Get access

Abstract

The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000°C under pressures up to 30 kilobars. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of ten. This diffusivity enhancement can be described by an average activation volume of -5.7±.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 eV to 3.6 eV at 30 kilobars

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 77
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Hu, S. M., in Atomic Diffusion in Semiconductors, ed. Shaw, D. (Plenum, London, 1972)Google Scholar
[2] Boyd, F. R. and England, J. L., J. Geophys. Res. 65, 741 (1960)10.1029/JZ065i002p00741CrossRefGoogle Scholar
[3] Aziz, M. J., Nygren, E., Hays, J. F., and Turnbull, D., to be published J. Appl. Phys. February 1985 Google Scholar
[4] Watkins, G. D., in Lattice Defects in Semiconductors 1974, ed. Huntley, F. A., Institute of Physics Conference Series No. 23 (Institute of Physics, Bristol and London, 1975)Google Scholar