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Preparation of InP Surfaces for Epitaxial Growth and Regrowth

Published online by Cambridge University Press:  21 February 2011

G. Hollinger ,
M.M. Besland ,
D. Gallet  and
M. Gendry
G. Hollinger
Affiliation:
Laboratoire d'Electronique, URA CNRS N°848, Ecole Centrale de Lyon, 69131 Ecully Cédex, France
M.M. Besland
Affiliation:
Laboratoire d'Electronique, URA CNRS N°848, Ecole Centrale de Lyon, 69131 Ecully Cédex, France
D. Gallet
Affiliation:
Laboratoire d'Electronique, URA CNRS N°848, Ecole Centrale de Lyon, 69131 Ecully Cédex, France
M. Gendry
Affiliation:
Laboratoire d'Electronique, URA CNRS N°848, Ecole Centrale de Lyon, 69131 Ecully Cédex, France
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Abstract

Various cleaning procedures used to prepare InP surfaces for epitaxial growth and regrowth have been investigated. They include standard surface chemical cleaning treatments, UV/ozone oxidation, (NH4) 2Sx sulfidation and in situ ECR hydrogen and oxygen plasma treatments. The quality of the various treatments is evaluated on the basis of the surface chemical composition prior to growth and from the structural and electrical properties of the corresponding epilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 139
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Ingrey, S., J. Vac. Sci. Technol. A 10 (1992).Google Scholar
2. Hollinger, G., Gallet, D., Gendry, M., Besland, M.P., Joseph, J., Appl. Phys. Lett. 59, 1617 (1991).Google Scholar
3. Overs, A., Jacob, G., Besland, M.P., Drouot, V., Gendry, M., Hollinger, G., Gauneau, M., Lecrosnier, D., Benchimol, J.L., Conf. Proc. 5th Intl. Conf. InP & Rel. Mat., 1993.Google Scholar
4. Katsura, S., Fukui, T., Takahashi, Y., Takakusaki, M., Nakamura, M., Oda, O., Sugiyama, Y., Tacano, M., Conf. Proc. 4th Intl. Conf. InP & Rel. Mat., p 270, 1992.Google Scholar
5. Drouot, V., Gendry, M., Hollinger, G., Letartre, X., Santinelli, C., Viktorovitch, P., Conf. Proc. 5th Intl. Conf. InP & Rel. Mat., 1993.Google Scholar
6. Gallet, D., Hollinger, G., Viktorovitch, P., Bonnevie, D., Goldstein, L., Robinson, B.J., Thompson, D.A., Hofstra, P.G., Conf. Proc. 4th Intl. Conf. InP & Rel. Mat., 1992.Google Scholar
7. Gallet, D., thesis, Ecole Centrale de Lyon, 1992.Google Scholar
8. Sandroff, C. J., Nottenburg, R.N., Bischoff, J.C., Bhat, R., Appl. Phys. Lett. 52, 218 (1987).Google Scholar
9. Gallet, D., Hollinger, G., Appl. Phys. Lett., 62, 982 (1993).Google Scholar
10. Gallet, D., Hollinger, G., Santinelli, C., Goldstein, L., J. Vac. Sci. Technol. B 10, 1267 (1992).Google Scholar
11. Hofstra, P.G., Thompson, D.A., Robinson, B.J., Hollinger, G., Streater, R., Conf. Proc. 5th Intl. Conf. InP & Rel. Mat., 1993.Google Scholar