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The Preparation of InAsSb/InSb SLS and InSb Photodiodes by MOCVD

Published online by Cambridge University Press:  25 February 2011

R. M. Biefeld ,
B. T. Cunningham ,
S. R. Kurtz  and
J. R. Wendt
R. M. Biefeld
Affiliation:
Sandia National Laboratories, Albuquerque, NM
B. T. Cunningham
Affiliation:
Sandia National Laboratories, Albuquerque, NM
S. R. Kurtz
Affiliation:
Sandia National Laboratories, Albuquerque, NM
J. R. Wendt
Affiliation:
Sandia National Laboratories, Albuquerque, NM
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Abstract

Infrared absorption and photoluminescence have been demonstrated for InAs1-xSbx/InSb strained-layer superlattices (SLS's) in the 8-15 μm region for As content less than 20%. This extended infrared activity is due to the type II heterojunction band offset in these SLS's. The preparation of the first MOCVD grown p-n junction diode was achieved by using dimethyltellurium as an n-type dopant. Several factors, such as background doping and dopant profiles affect the performance of this device. InSb diodes have been prepared using tetraethyltin. The resulting current-voltage characteristics are improved over those of diodes grown previously using dimethyltellurium. Doping levels of 8x1015 to 5x1018cm−3 and mobilities of 6.7x104 to 1.1x104 cm2/Vs have been measured for Sn doped InSb. SLS diode structures have been prepared using Sn and Cd as the dopants. Structures prepared with p-type buffer layers are more reproducible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 175
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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