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Poly-Silicon Deposition by Evaporation for TFTs

Published online by Cambridge University Press:  22 February 2011

W. Schmolla ,
J. Diefenbach ,
G. Blang  and
W. Senske
W. Schmolla
Affiliation:
AEG Research Institute, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
J. Diefenbach
Affiliation:
AEG Research Institute, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
G. Blang
Affiliation:
AEG Research Institute, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
W. Senske
Affiliation:
AEG Research Institute, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
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Abstract

Poly-Si films were e-gun evaporated onto glass substrates. The Hall-mobility for holes was found to be about 2 cm2/Vs in undoped poly-Si films deposited at 400°C and 9 cm2/Vs at 500°C. TFTs were fabricated on the base of poly-Si evaporation technique on borosilicate glass at a highest process temperature of 550°C without ion implantation. The electrical TFT characteristics yield electron field-effect mobilities higher than 10 cm2/Vs as well as threshold voltages less than IV and an on/off current ratio in excess of 104.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 329
Copyright
Copyright © Materials Research Society 1988

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References

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