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Physical and Electrical Properties of Tantalum Oxide Thin Films Deposited by Low Pressure Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

William R. Hitchens ,
Wilbur C. Krusell  and
Daniel M. Dobkin
William R. Hitchens
Affiliation:
Watkins-Johnson Co., 440 Kings Village Rd., Scott's Valley, CA 95066
Wilbur C. Krusell
Affiliation:
Watkins-Johnson Co., 440 Kings Village Rd., Scott's Valley, CA 95066
Daniel M. Dobkin
Affiliation:
Watkins-Johnson Co., 440 Kings Village Rd., Scott's Valley, CA 95066
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Abstract

Ta2O5 films suitable for DRAM use have been deposited on silicon, polysilicon, and SiO2 by LP-CVD from Ta (OC2H5)5 and O2. Uniformity, reproducibility, and conformality are excellent. Annealed films are polycrystalline, and their surfaces are characterized by 2 nm high, 1 mgr;m diameter nucleation centers surrounded by circular crystallization fronts. The electrical properties of annealed films are dominated by a SiO2-rich layer which forms between the Ta2O5 and the silicon or polysilicon substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 499
Copyright
Copyright © Materials Research Society 1993

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References

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